Measurement of the linear electro-optic coefficients of sol-gel derived strontium barium niobate thin films using a two-beam polarization interferometer

2000 ◽  
Vol 76 (19) ◽  
pp. 2671-2673 ◽  
Author(s):  
Junmo Koo ◽  
Changho Lee ◽  
Jae Hyeok Jang ◽  
Kwangsoo No ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Beam Polarization ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
Electro Optic ◽  
Polarization Interferometer

Ferroelectric Thin Films on Silicon and Fused Silica Substrates by Sol-Gel Process

1990 ◽  
Vol 200 ◽  
Author(s):  
Yuhuan Xu ◽  
Ching Jih Chen ◽  
Ren Xu ◽  
John D. Mackenzie
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Fused Silica ◽  
Ferroelectric Thin Films ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
Sol Gel Process ◽  
Silica Substrates

ABSTRACTFerroelectric thin films including undoped and doped PZT (lead zirconate titanate), BaTiO3 (barium titanate), SBN (strontium barium niobate), KNbO3 (potassium niobate), PBN (lead barium niobate), KNSBN (potassium sodium strontium barium niobate), and LiNbO3 (lithium niobate) were made on silicon and fused silica substrates by a sol-gel process. Microstructure and physical (pyroelectric, ferroelectric and optical) properties of these thin films were studied. Transparent and preferentially orientated SBN thin films on fused silica substrates can be obtained by applying a d.c. electric field during heat treatment. A heterojunction effect was observed in ferroelectric thin films on both n-silicon and p-silicon through measurement of I-V characteristics, and by the demonstration of a photocurrent effect.

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