Temperature dependence of intrinsic recombination coefficients in 1.3 μm InAsP/InP quantum-well semiconductor lasers

2000 ◽  
Vol 76 (19) ◽  
pp. 2659-2661 ◽  
Author(s):  
J. M. Pikal ◽  
C. S. Menoni ◽  
P. Thiagarajan ◽  
G. Y. Robinson ◽  
H. Temkin
Keyword(s):  
Quantum Well ◽  
Temperature Dependence ◽  
Semiconductor Lasers

scholarly journals Pressure and Temperature Dependence of Threshold Current in Semiconductor Lasers Based on InGaAs/GaAs Quantum-Well Systems

2007 ◽  
Vol 112 (2) ◽  
pp. 437-442 ◽  
Author(s):  
M. Maziarz ◽  
B. Piechal ◽  
A. Bercha ◽  
R. Bohdan ◽  
W. Trzeciakowski ◽  
...  
Keyword(s):  
Quantum Well ◽  
Temperature Dependence ◽  
Semiconductor Lasers ◽  
Threshold Current

The effect of carrier capture and escape on the optical gain of quantum-well semiconductor lasers

1999 ◽  
Vol 77 (2) ◽  
pp. 157-166
Author(s):  
M S Wartak ◽  
M Kucharczyk ◽  
T Makino
Keyword(s):  
Evolution Equation ◽  
Quantum Well ◽  
Density Matrix ◽  
Temperature Dependence ◽  
Semiconductor Lasers ◽  
Time Evolution ◽  
Optical Gain ◽  
Carrier Capture ◽  
Time Evolution Equation ◽  
Gain Peak

Effects of the carrier capture and escape on the optical gain of a quantum-well system are introduced and analyzed. The analysis is based on the density matrix time evolution equation solved in the linear approximation. It has been found that the capture and escape effects modify the broadening function and, as a consequence, reduce the optical and differential gain. The temperature dependence of the gain peak resulting from the inclusion of carrier capture/escape processes has been found.PACS Nos.: 42.55.P, 78.66

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation

Anomalous dispersion, differential gain, and dispersion of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well semiconductor lasers

2000 ◽  
Vol 34 (10) ◽  
pp. 1207-1213 ◽  
Author(s):  
A. P. Bogatov ◽  
A. E. Boltaseva ◽  
A. E. Drakin ◽  
M. A. Belkin ◽  
V. P. Konyaev
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Anomalous Dispersion ◽  
Differential Gain ◽  
Strained Quantum Well

Temperature dependence of the lowest excitonic transition for an InAs ultrathin quantum well

2006 ◽  
Vol 99 (6) ◽  
pp. 063517 ◽  
Author(s):  
S. D. Singh ◽  
S. Porwal ◽  
T. K. Sharma ◽  
K. C. Rustagi
Keyword(s):  
Quantum Well ◽  
Temperature Dependence ◽  
Excitonic Transition
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