Colossal magnetoresistance magnetic tunnel junctions grown by molecular-beam epitaxy

2000 ◽  
Vol 76 (14) ◽  
pp. 1914-1916 ◽  
Author(s):  
J. O’Donnell ◽  
A. E. Andrus ◽  
S. Oh ◽  
E. V. Colla ◽  
J. N. Eckstein
Keyword(s):  
Molecular Beam Epitaxy ◽  
Colossal Magnetoresistance ◽  
Molecular Beam ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions

scholarly journals Magnetotransport in MgO-based magnetic tunnel junctions grown by molecular beam epitaxy (invited)

2014 ◽  
Vol 115 (17) ◽  
pp. 172610 ◽  
Author(s):  
S. Andrieu ◽  
F. Bonell ◽  
T. Hauet ◽  
F. Montaigne ◽  
L. Calmels ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions

Epitaxial growth of MgO and Fe∕MgO∕Fe magnetic tunnel junctions on (100)-Si by molecular beam epitaxy

2008 ◽  
Vol 93 (14) ◽  
pp. 142511 ◽  
Author(s):  
G. X. Miao ◽  
J. Y. Chang ◽  
M. J. van Veenhuizen ◽  
K. Thiel ◽  
M. Seibt ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions

InP tunnel junctions grown by atomic layer molecular beam epitaxy on InP and InP-on-Si substrates

1995 ◽  
Vol 36 (3) ◽  
pp. 271-276 ◽  
Author(s):  
M.L. Dotor ◽  
D. Golmayo ◽  
A. Calle ◽  
J.R. Sendra ◽  
J.V. Anguita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Tunnel Junctions ◽  
Atomic Layer ◽  
Si Substrates

Ba1−xKxBiO3 sandwich-type tunnel junctions grown by molecular beam epitaxy

1992 ◽  
Vol 201 (1-2) ◽  
pp. 166-170 ◽  
Author(s):  
E.S. Hellman ◽  
S. Martin ◽  
E.H. Hartford ◽  
D.J. Werder ◽  
G.M. Roesler ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Tunnel Junctions ◽  
Sandwich Type

scholarly journals High conductivity n-Al06Ga04N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters

2021 ◽  
Author(s):  
Jianfeng Wang ◽  
Burhan SaifAddin ◽  
Christian J. Zollner ◽  
Bastien Bonef ◽  
Abdullah Almogbel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Tunnel Junctions ◽  
High Conductivity ◽  
Uv Emitters

Growth of “colossal” magnetoresistance heterostructures by molecular beam epitaxy

1999 ◽  
Vol 602 ◽  
Author(s):  
J. O'Donnell ◽  
A. E. Andrus ◽  
S. Oh ◽  
E. Colla ◽  
M. Warusawithana ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Colossal Magnetoresistance ◽  
Molecular Beam ◽  
Residual Resistivity ◽  
Bulk Single Crystal ◽  
Heteroepitaxial Growth ◽  
Flat Surfaces ◽  
Narrow Region ◽  
Slight Excess ◽  
Atomically Flat

We discuss the heteroepitaxial growth of La1−xSrxMnO3 films and CaTiO3 insulating barriers by molecular beam epitaxy. We find that the surface morphology and residual resistivity of the manganite electrodes is critically dependent on the film stoichiometry. The most important parameter is the concentration of La+Sr (cubic perovskite A-site cations) to that of Mn (B-site cation). If La+Sr is supplied in slight excess, the films grow with atomically flat surfaces, but the residual resistivity at 4.2K is high (as high as 6500 µΩ-cm), and Curie temperature (Tc) low (<300 K). If Mn is supplied in slight excess, the films have high Tc (370 K) and residual resistivity (35 µΩ-cm) better than bulk single crystal values, but the surface is no longer atomically flat. There appears to be a very narrow region of phase space where it is possible to have low resistivity, high Tc films with atomically flat surfaces. This is precisely where one would like to place heterostructure devices.

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