Optical and acoustic phonon modes in self-organized Ge quantum dot superlattices

2000 ◽  
Vol 76 (5) ◽  
pp. 586-588 ◽  
Author(s):  
J. L. Liu ◽  
G. Jin ◽  
Y. S. Tang ◽  
Y. H. Luo ◽  
K. L. Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Acoustic Phonon ◽  
Phonon Modes ◽  
Self Organized ◽  
Ge Quantum Dot

scholarly journals Response to “Comment on ‘Optical and acoustic phonon modes in self-organized Ge quantum dot superlattices’ ” [Appl. Phys. Lett. 78, 1160 (2001)]

2001 ◽  
Vol 78 (8) ◽  
pp. 1162-1163 ◽  
Author(s):  
J. L. Liu ◽  
G. Jin ◽  
Y. S. Tang ◽  
Y. H. Luo ◽  
K. L. Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Acoustic Phonon ◽  
Phonon Modes ◽  
Self Organized ◽  
Ge Quantum Dot

scholarly journals Folded Acoustic Phonon Modes in Ge/Si Quantum Dot Superlattices With Different Periods

2006 ◽  
Vol 1 (1) ◽  
pp. 86-91 ◽  
Author(s):  
Zheng Yang ◽  
Jian-Lin Liu ◽  
Yi Shi ◽  
You-Dou Zheng ◽  
Kang L. Wang
Keyword(s):  
Quantum Dot ◽  
Acoustic Phonon ◽  
Phonon Modes ◽  
Si Quantum Dot

CMOS-Compatible Generation of Self-Organized 3-D Ge Quantum Dot Array for Photonic and Thermoelectric Applications

2012 ◽  
Vol 11 (4) ◽  
pp. 657-660 ◽  
Author(s):  
Ching-Chi Wang ◽  
Kuan-Hung Chen ◽  
Inn-Hao Chen ◽  
Wei-Ting Lai ◽  
Hung-Tai Chang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Self Organized ◽  
Cmos Compatible ◽  
Ge Quantum Dot

Vertical and lateral ordering in self-organized quantum dot superlattices

2001 ◽  
Vol 9 (1) ◽  
pp. 149-163 ◽  
Author(s):  
G. Springholz ◽  
M. Pinczolits ◽  
V. Holy ◽  
S. Zerlauth ◽  
I. Vavra ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Self Organized ◽  
Lateral Ordering

3D hexagonal versus trigonal ordering in self-organized PbSe quantum dot superlattices

2004 ◽  
Vol 21 (2-4) ◽  
pp. 611-614 ◽  
Author(s):  
R.T Lechner ◽  
T.U Schülli ◽  
V Holy ◽  
J Stangl ◽  
A Raab ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Self Organized

Modeling and Fabrication of Cladded Ge Quantum Dot Gate Silicon MOSFETs Exhibiting 3-State Behavior

2008 ◽  
Vol 1108 ◽  
Author(s):  
Faquir C. Jain ◽  
Mukesh Gogna ◽  
Fuad Alamoody ◽  
Supriya Karmakar ◽  
Ernesto Suarez ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Threshold Voltage ◽  
Intermediate State ◽  
Gate Voltage ◽  
Inversion Layer ◽  
Similar Increase ◽  
State Behavior ◽  
Charge Neutralization ◽  
Ge Quantum Dot ◽  
State Device

AbstractThis paper presents electrical transfer (Id-Vg) and output (Id-Vds) characteristics of a GeOx-cladded-Ge quantum dot (QD) gate Si MOSFET devices. In QD gate FETs, the manifestation of an intermediate state ‘i” makes it a 3-state device. The intermediate state originates due to compensation of increment in the gate voltage by a similar increase in the threshold voltage, which occurs via charge neutralization in the QD gate due to transfer of charge from the inversion layer to either first or second of the two QD layers.

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