scholarly journals Size-dependent electron-hole exchange interaction in Si nanocrystals

2000 ◽  
Vol 76 (3) ◽  
pp. 351-353 ◽  
Author(s):  
M. L. Brongersma ◽  
P. G. Kik ◽  
A. Polman ◽  
K. S. Min ◽  
Harry A. Atwater
Keyword(s):  
Exchange Interaction ◽  
Electron Hole ◽  
Size Dependent ◽  
Si Nanocrystals

Size-dependent electron-hole exchange interaction in CdSe quantum dots

1995 ◽  
Vol 17 (11-12) ◽  
pp. 1407-1412 ◽  
Author(s):  
M. Chamarro ◽  
C. Gourdon ◽  
P. Lavallard ◽  
O. Lublinskaya ◽  
A. I. Ekimov
Keyword(s):  
Quantum Dots ◽  
Exchange Interaction ◽  
Cdse Quantum Dots ◽  
Electron Hole ◽  
Size Dependent

Synthesis and size control of Si nanocrystals by SiO/SiO2 superlattices and Er doping

2002 ◽  
Vol 737 ◽  
Author(s):  
J. Heitmann ◽  
D. Kovalev ◽  
M. Schmidt ◽  
L.X. Yi ◽  
R. Scholz ◽  
...  
Keyword(s):  
Phase Separation ◽  
Crystal Size ◽  
Radiative Lifetime ◽  
Size Control ◽  
Luminescence Signal ◽  
Er Doping ◽  
Size Dependent ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Ultrathin Layers

ABSTRACTThe synthesis of nc-Si by reactive evaporation of SiO and subsequent thermal induced phase separation is reported. The size control of nc-Si is realized by evaporation of SiO/SiO2 superlattices. By this method an independent control of crystal size and density is possible. The phase separation of SiO into SiO2 and nc-Si in the limit of ultrathin layers is investigated. Different steps of this phase separation are characterized by photoluminescence, infrared absorption and transmission electron microscopy measurements. The strong room temperature luminescence of nc-Si shows a strong blueshift of the photoluminescence signal from 850 to 750 nm with decreasing crystal size. Several size dependent properties of this luminescence signal, like decreasing radiative lifetime and increasing no-phonon transition properties with decreasing crystal size are in good agreement with the quantum confinement model. Er doping of the nc-Si shows an enhancement of the Er luminescence at 1.54 μm by a factor of 5000 compared to doped SiO2 layers. The decreasing transfer time for the nc-Si to Er transition with decreasing crystal size can be understood as additional proof of increasing recombination probability within the nc-Si for decreasing crystal size.

Photoluminescence from n-(p-) type impurity doped Si nanocrystals

2000 ◽  
Vol 638 ◽  
Author(s):  
Minoru Fujii ◽  
Atsushi Mimura ◽  
Shinji Hayashi ◽  
Dmitri Kovalev ◽  
Frederick Koch
Keyword(s):  
Free Electrons ◽  
Electron Hole ◽  
P Concentration ◽  
Si Nanocrystals ◽  
Donor And Acceptor ◽  
Impurity Doped ◽  
Pl Intensity ◽  
B Doping ◽  
Three Body ◽  
P Type

AbstractEffects of impurity (P and B) doping on the photoluminescence (PL) properties of Si nanocrystals (nc-Si) in SiO2 thin films are studied. It is shown that with increasing P concentration, PL intensity first increases and then decreases. In the P concentration range where PL intensity increases, quenching of the defect-related PL is observed, suggesting that dangling-bond defects are passivated by P doping. On the other hand, in the range where PL intensity decreases, optical absorptiondue to the intravalley transitions of free electrons generated by P doping appears. The generation of free electrons andthe resultant three-body Auger recombination of electron-hole pairs is considered to be responsible for theobserved PL quenching. In the case of B doping, the behavior is much different. With increasing B concentration, PL intensity decreases monotonously. By combining the results obtained for P and B doped samples, theeffects of donor and acceptor impurities on the PL properties of nc-Si are discussed.

Effect of Electron–Hole Overlap and Exchange Interaction on Exciton Radiative Lifetimes of CdTe/CdSe Heteronanocrystals

ACS Nano ◽  
2016 ◽  
Vol 10 (4) ◽  
pp. 4102-4110 ◽  
Author(s):  
Andrés Granados del Águila ◽  
Esther Groeneveld ◽  
Jan C. Maan ◽  
Celso de Mello Donegá ◽  
Peter C. M. Christianen
Keyword(s):  
Exchange Interaction ◽  
Electron Hole ◽  
Radiative Lifetimes

Electron-Hole Exchange Interaction in Quantum Wells

1988 ◽  
pp. 200-203 ◽  
Author(s):  
Y. Chen ◽  
B. Gil ◽  
P. Lefebvre ◽  
H. Mathieu ◽  
T. Fukunaga ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Exchange Interaction ◽  
Electron Hole

On the Suppression of Electron-Hole Exchange Interaction in a Reservoir of Nonradiative Excitons

2019 ◽  
Vol 53 (9) ◽  
pp. 1170-1174 ◽  
Author(s):  
A. V. Trifonov ◽  
I. V. Ignatiev ◽  
K. V. Kavokin ◽  
A. V. Kavokin ◽  
P. Yu. Shapochkin ◽  
...  
Keyword(s):  
Exchange Interaction ◽  
Electron Hole
Sign in / Sign up

Export Citation Format

Share Document