An oxide-diluted magnetic semiconductor: Mn-doped ZnO

1999 ◽  
Vol 75 (21) ◽  
pp. 3366-3368 ◽  
Author(s):  
T. Fukumura ◽  
Zhengwu Jin ◽  
A. Ohtomo ◽  
H. Koinuma ◽  
M. Kawasaki
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Doped Zno ◽  
Diluted Magnetic ◽  
Mn Doped

scholarly journals Effects of pulsed magnetic field on Mn-doped ZnO diluted magnetic semiconductor prepared by hydrothermal method

2012 ◽  
Vol 61 (19) ◽  
pp. 198103
Author(s):  
Wang Shi-Wei ◽  
Zhu Ming-Yuan ◽  
Zhong Min ◽  
Liu Cong ◽  
Li Ying ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Hydrothermal Method ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Pulsed Magnetic Field ◽  
Doped Zno ◽  
Diluted Magnetic ◽  
Mn Doped

Structural Characterization, and Magnetic Morphological Study of Ni+2 Doped ZnO Synthesized by Combustion Reaction Application for DMS

2012 ◽  
Vol 727-728 ◽  
pp. 511-515 ◽  
Author(s):  
R. Torquato ◽  
E. Shirsath Sagar ◽  
Ruth Herta Goldsmith Aliaga Kiminami ◽  
Ana Cristina Figueiredo de Melo Costa
Keyword(s):  
Magnetic Properties ◽  
Magnetic Measurements ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Transition Metal Ions ◽  
Combustion Reaction ◽  
Second Phase ◽  
Doped Zno ◽  
Diluted Magnetic ◽  
Maximum Temperatures

ZnO is a semiconductor that can be doped with transition metal ions, and thus becomes feasible to use in the diluted magnetic semiconductor (DMS), or semiconductor with magnetic properties. In this work we have studied the influence of doping of Ni+2on the structural, morphological and magnetic properties of Zn1-xNixO system, to x = 0.07, 0.1 and 0.2 mol of Ni+2synthesized by combustion reaction. The systems were characterized by XRD, SEM and VSM. The maximum temperatures ranged from 639 K and 683 K. All systems showed a majority phase formation of ZnO, with the presence of the second phase NiO. The crystallite size for the majority phase varied between 49 and 56nm. All systems have resulted in samples with a morphology consisting of dense clusters, formed by particles pre-sintered and shaped roughly hexagonal plates. The magnetic measurements showed that the values of saturation magnetization lies between 4.6 to 28.5emu/g, remanent magnetization of 0.01 to 0.3 emu/g, coercive force values varies between 12.7 and 62.4 Oe and Curie temperature ranging from 308 to 311K.

Room temperature ferromagnetism of Fe-doped ZnO and MgO thin films prepared by ink-jet printing

2012 ◽  
Vol 1394 ◽  
Author(s):  
Mei Fang ◽  
Wolfgang Voit ◽  
Adrica Kyndiah ◽  
Yan Wu ◽  
Lyubov Belova ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Diluted Magnetic Semiconductor ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Semiconductor ◽  
Ink Jet ◽  
Jet Printing ◽  
Doped Zno ◽  
Diluted Magnetic ◽  
Magnetic Insulator

ABSTRACTRoom temperature magnetic properties of un-doped, as well as 10 at.% Fe-doped ZnO and MgO single-pass layer of ink-jet printed thin films have been investigated to obtain insight into the role of the band gaps and mechanisms for the origin of ferromagnetic order in these materials. It is found that on doping with Fe, the saturation magnetization is enhanced by several-fold in both systems when compared with the respective un-doped thin films. For a “28 nm thick film of Fe-doped ZnO (Diluted Magnetic Semiconductor, DMS) we observe an enhanced moment of 0.465μB /Fe atom while it is around 0.111μB/Fe atom for the doped MgO (Diluted Magnetic Insulator, DMI) film of comparable thickness. Also, the pure ZnO is far more ferromagnetic than pure MgO at comparable low film thicknesses which can be attributed to defect induced magnetism originating from cat-ion vacancies. However, the film thickness dependence of the magnetization and the defect concentrations are found to be significantly different in the two systems so that a comparison of the magnetism becomes more complex for thicker films.

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