Increase in response time of low-temperature-grown GaAs photoconductive switches at high voltage bias

1999 ◽  
Vol 75 (15) ◽  
pp. 2313-2315 ◽  
Author(s):  
N. Zamdmer ◽  
Qing Hu ◽  
K. A. McIntosh ◽  
S. Verghese
1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Chen ◽  
S. Williamson ◽  
T. Brock ◽  
F. W. Smith ◽  
A. R. Calawa

ABSTRACTWe report on the development of a new, integrable photoconductive-type detector based on low-temperature-grown GaAs. The detector has a response time of 1.2 ps and a 3-dB bandwidth of 375 GHz. The responsivity is 0.1 A/W. This is the fastest photodetector reported to date. We discuss the unique properties of this device, including its performance as functions of both light intensity and bias voltage.


2007 ◽  
Author(s):  
G. Loata ◽  
T. Loffler ◽  
M. D. Thomson ◽  
A. Lisauskas ◽  
H. G. Roskos

2001 ◽  
Vol 79 (6) ◽  
pp. 764-766 ◽  
Author(s):  
Tsuyoshi Okuno ◽  
Yasuaki Masumoto ◽  
Yasushi Sakuma ◽  
Yuuichi Hayasaki ◽  
Hiroshi Okamoto

Author(s):  
M. G. Labate ◽  
A. Buonanno ◽  
M. D'Urso ◽  
G. Calzolaio ◽  
A. Vacca ◽  
...  

1990 ◽  
Vol 37 (12) ◽  
pp. 2493-2498 ◽  
Author(s):  
M.Y. Frankel ◽  
J.F. Whitaker ◽  
G.A. Mourou ◽  
F.W. Smith ◽  
A.R. Calawa

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