High electron mobility polycrystalline silicon thin-film transistors on steel foil substrates

1999 ◽  
Vol 75 (15) ◽  
pp. 2244-2246 ◽  
Author(s):  
Ming Wu ◽  
Kiran Pangal ◽  
J. C. Sturm ◽  
Sigurd Wagner
2014 ◽  
Vol 15 (11) ◽  
pp. 2749-2755 ◽  
Author(s):  
Jin-Peng Yang ◽  
Qi-Jun Sun ◽  
Keiichirou Yonezawa ◽  
Alexander Hinderhofer ◽  
Alexander Gerlach ◽  
...  

2014 ◽  
Vol 2 (14) ◽  
pp. 2612-2621 ◽  
Author(s):  
Jon-Paul Sun ◽  
Arthur D. Hendsbee ◽  
Ala'a F. Eftaiha ◽  
Casper Macaulay ◽  
Lesley R. Rutledge ◽  
...  

High electron mobility in a series of phthalimide–thiophene small molecules has been demonstrated when incorporated into thin film transistors.


2008 ◽  
Vol 55 (11) ◽  
pp. 3001-3011 ◽  
Author(s):  
Flora M. Li ◽  
Gen-Wen Hsieh ◽  
Sharvari Dalal ◽  
Marcus C. Newton ◽  
James E. Stott ◽  
...  

2005 ◽  
Vol 44 (6A) ◽  
pp. 3663-3668 ◽  
Author(s):  
Youji Inoue ◽  
Youichi Sakamoto ◽  
Toshiyasu Suzuki ◽  
Masafumi Kobayashi ◽  
Yuan Gao ◽  
...  

2018 ◽  
Vol 30 (40) ◽  
pp. 1804120 ◽  
Author(s):  
Minuk Lee ◽  
Jeong-Wan Jo ◽  
Yoon-Jeong Kim ◽  
Seungbeom Choi ◽  
Sung Min Kwon ◽  
...  

2000 ◽  
Vol 609 ◽  
Author(s):  
R.E.I. Schropp ◽  
J.K. Rath ◽  
B. Stannowski ◽  
C.H.M. Van Der Werf ◽  
Y. Chen ◽  
...  

ABSTRACTDirect deposition of polycrystalline silicon (poly-Si) thin films by the Hot Wire CVD method has been used for the first time for the fabrication of poly-Si top gate Thin Film Transistors (TFTs). The TFTs have a high electron mobility in saturation of up to 4 cm2V−1s−1 as well as a remarkably large ON/OFF ratio of up to 6 × 105.


2011 ◽  
Vol 23 (32) ◽  
pp. 3681-3685 ◽  
Author(s):  
Junshi Soeda ◽  
Takafumi Uemura ◽  
Yu Mizuno ◽  
Akiko Nakao ◽  
Yasuhiro Nakazawa ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (51) ◽  
pp. 45410-45418 ◽  
Author(s):  
Yunfeng Deng ◽  
Bin Sun ◽  
Jesse Quinn ◽  
Yinghui He ◽  
Jackson Ellard ◽  
...  

Three thiophene-S,S-dioxidized indophenines with deep frontier energy levels are synthesized from isatins and thiophene, which exhibit n-type semiconductor performance with high electron mobility of up to 0.11 cm2 V−1 s−1 in thin film transistors.


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