Observation of a non Fowler–Nordheim field-induced electron emission phenomenon from chemical vapor deposited diamond films

1999 ◽  
Vol 75 (9) ◽  
pp. 1323-1325 ◽  
Author(s):  
J. Chen ◽  
S. Z. Deng ◽  
N. S. Xu ◽  
K. H. Wu ◽  
E. G. Wang
1999 ◽  
Vol 558 ◽  
Author(s):  
H. Kawamura ◽  
S. Kato ◽  
T. Maki ◽  
T. Kobayashi

ABSTRACTA planar electron emitter was fabricated employing chemical vapor deposited (CVD) diamond thin films. This device is composed of CVD diamond films selectively deposited on a pair of patterned Au/Cr films separated 2 micrometers from each other. When the driving voltage (Vd) was applied between the Au/Cr films, the extremely low threshold emission from diamond film was observed (Vd ∼ 10 V). Furthermore, by applying high voltage on anode screen placed above this device, part of emitted current was drawn to the anode and the luminescence from phosphors was clearly seen under Vd = 50V. The mechanism of electron emission from the diamond films used in this device was also discussed by comparing with the electron emission from isolated diamond particles. It was found that the effective work functions differ between the isolated particles and the continuous films. This result suggests a difference in the emission site of electrons.


1995 ◽  
Vol 66 (2) ◽  
pp. 242-244 ◽  
Author(s):  
G. T. Mearini ◽  
I. L. Krainsky ◽  
J. A. Dayton ◽  
Yaxin Wang ◽  
Christian A. Zorman ◽  
...  

2001 ◽  
Vol 45 (6) ◽  
pp. 915-919 ◽  
Author(s):  
J.J Liu ◽  
D.Y.T Chiu ◽  
D.C Morton ◽  
D.H Kang ◽  
V.V Zhirnov ◽  
...  

1995 ◽  
Vol 10 (7) ◽  
pp. 1585-1588 ◽  
Author(s):  
Z. Feng ◽  
I.G. Brown ◽  
J.W. Ager

Electron emission from chemical vapor deposited (CVD) diamond and amorphous carbon (a-C) films was observed with a simple field emission device (FED). Both diamond and a-C films were prepared with microwave plasma-enhanced CVD techniques. Electron emission in the ficld strength range + 10 to −10 MVm−1 was studied, and the field emission source was confirmed by a diode characteristic of the I-V curve, a straight line in the Fowler-Nordheim (F-N) plot, and direct observation of light emission from a fluorescent screen. The turn-on field strength was ∼5 MVm−1, which was similar for both kinds of carbon films. The highest current density for diamond films, observed at a field strength of 10 MVm−1, was ∼15 μA cm−2. Diamond films yielded a higher emission current than a-C films. The reasons for the observed field emission are discussed.


1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.


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