Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

1999 ◽  
Vol 75 (8) ◽  
pp. 1167-1169 ◽  
Author(s):  
S. K. Jung ◽  
C. K. Hyon ◽  
J. H. Park ◽  
S. W. Hwang ◽  
D. Ahn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resonant Tunneling ◽  
Electrical Characterization ◽  
Self Assembled ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

Spin polarization of carriers in resonant tunneling devices containing InAs self-assembled quantum dots

2015 ◽  
Vol 88 ◽  
pp. 574-581 ◽  
Author(s):  
J. Araújo e Nobrega ◽  
V. Orsi Gordo ◽  
H.V.A. Galeti ◽  
Y. Galvão Gobato ◽  
M.J.S.P. Brasil ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Spin Polarization ◽  
Resonant Tunneling ◽  
Self Assembled ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

scholarly journals Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices

2017 ◽  
Vol 46 (7) ◽  
pp. 3851-3856 ◽  
Author(s):  
V. Orsi Gordo ◽  
Y. Galvão Gobato ◽  
H. V. A. Galeti ◽  
M. J. S. P. Brasil ◽  
D. Taylor ◽  
...  
Keyword(s):  
Spin Polarization ◽  
Resonant Tunneling ◽  
Quantum Rings ◽  
Self Assembled ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

Transport in Quantum Dots: Observation of Atomlike Properties

MRS Bulletin ◽  
1998 ◽  
Vol 23 (2) ◽  
pp. 49-53 ◽  
Author(s):  
Seigo Tarucha
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Ionization Energy ◽  
Resonant Tunneling ◽  
Semiconductor Quantum Dots ◽  
Coulomb Interactions ◽  
Artificial Atoms ◽  
Large Maximum ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

Recent advances in nanofabrication technologies have enabled us to fabricate semiconductor quantum dots in which electrons are three-dimensionally confined. These quantum dots are often referred to as artificial atoms since their electronic properties—for example the ionization energy and discrete excitation spectrum—resemble those of real atoms. Electrons bound to a nucleus potential encounter sufficiently strong effects of quantum-mechanical confinement and mutual Coulomb interactions that they are well arranged in ordered states, and this leads to the arrangement of atoms in the periodic table. It is well known in atom physics that the threedimensional spherically symmetric potential around atoms gives rise to the shell structure 1s, 2s, 2p, 3s, 3p,…. The ionization energy has a large maximum for atomic numbers 2, 10, 18,…. Up to atomic number 23, these shells are filled sequentially. Hund's rule determines whether a spin-down or a spin-up electron is added. This article describes how closely we can approach the electronic properties of real atoms through the use of semiconductor quantum dots.Both the effects of quantum confinement and Coulomb interaction become strong in quantum dots when the dot size is comparable to the electron wavelength and contains just a few electrons. The consequence of these factors on transport have only recently been studied in vertical-dot devices, which contain a dot located between source and drain contacts by means of heterostructure tunnel barriers because the few-electron regime is only accessible in the vertical-dot device. Studies include transport measurements through submicron resonant tunneling devices and submicron gated resonant-tunneling devices, and capacitance measurements on submicron double-barrier structures. However quantum-dot devices usually contain some disorder—for instance because of impurities or when the shape of the dot is irregular—which readily causes sample specific inhomogeneity in the electronic properties. Clean quantum dots, in the form of regular disks, have only recently been fabricated in a semiconductor heterostructure (Figure 1), and have been used to study the atomlike properties of artificial atoms.

Characterization of AlSb/InAs surfaces and resonant tunneling devices

1999 ◽  
Vol 17 (4) ◽  
pp. 1786 ◽  
Author(s):  
B. Z. Nosho ◽  
W. H. Weinberg ◽  
W. Barvosa-Carter ◽  
A. S. Bracker ◽  
R. Magno ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

Electrical characterization of self-assembled InAs/GaAs quantum dots by capacitance techniques

2002 ◽  
Vol 91-92 ◽  
pp. 393-397 ◽  
Author(s):  
E. Gombia ◽  
R. Mosca ◽  
P. Frigeri ◽  
S. Franchi ◽  
S. Amighetti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electrical Characterization ◽  
Self Assembled
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