Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy

1999 ◽  
Vol 75 (4) ◽  
pp. 501-503 ◽  
Author(s):  
I. A. Buyanova ◽  
W. M. Chen ◽  
G. Pozina ◽  
J. P. Bergman ◽  
B. Monemar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Low Temperature Photoluminescence

Low temperature photoluminescence of tellurium-doped GaSb grown by molecular beam epitaxy

1996 ◽  
Vol 169 (3) ◽  
pp. 450-456 ◽  
Author(s):  
A. Bignazzi ◽  
E. Grilli ◽  
M. Guzzi ◽  
M. Radice ◽  
A. Bosacchi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Low Temperature Photoluminescence

Low‐temperature photoluminescence in AlxGa1−xAs grown by molecular beam epitaxy

1985 ◽  
Vol 58 (4) ◽  
pp. 1643-1646 ◽  
Author(s):  
D. C. Reynolds ◽  
K. K. Bajaj ◽  
C. W. Litton ◽  
Jasprit Singh ◽  
P. W. Yu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Low Temperature Photoluminescence

The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy

1993 ◽  
Vol 8 (12) ◽  
pp. 3122-3125 ◽  
Author(s):  
S.F. Yoon ◽  
H.M. Li ◽  
K. Radhakrishnan ◽  
D.H. Zhang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Growth Interruption ◽  
Interface Fluctuations ◽  
Low Temperature Photoluminescence

Low-temperature photoluminescence measurements have been taken to monitor the changes in the properties of strained GaAs/InGaAs/GaAs quantum wells grown by molecular beam epitaxy at different substrate (well) temperatures with and without a 90 s-growth-interruption at the heterointerfaces. Sharp exciton peaks with average linewidths as low as 1.7 meV were observed in all the spectra. The spectra from the samples grown employing interrupts were narrower than those without interrupts, indicating structurally improved interfaces. Further linewidth narrowing was also seen in samples employing an additional interrupt of the same duration at the bottom InGaAs/GaAs interface, or by increasing the interrupt time at the top GaAs/InGaAs interface to 180 s. A consistent reduction in the linewidth was also observed in wells grown at higher temperatures. This is most likely due to greater indium re-evaporation leading to a reduction in strain, well width, and interface fluctuations.

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