Comparison of mobility and hole current activation energy in the space charge trap-limited regime in a starburst amine

1999 ◽  
Vol 75 (2) ◽  
pp. 217-219 ◽  
Author(s):  
J. Staudigel ◽  
M. Stössel ◽  
F. Steuber ◽  
J. Simmerer
Keyword(s):  
Activation Energy ◽  
Space Charge ◽  
Charge Trap ◽  
Current Activation ◽  
Hole Current

ACTIVATION ENERGY FOR HOLE INJECTION AND ANALYSIS OF THE SPACE CHARGE LAYER IN ANTHRACENE CRYSTALS

1974 ◽  
Vol 3 (12) ◽  
pp. 1459-1462
Author(s):  
Masahiro Kotani ◽  
Yoko Watanabe ◽  
Tomoko Kato
Keyword(s):  
Activation Energy ◽  
Space Charge ◽  
Space Charge Layer ◽  
Hole Injection ◽  
Charge Layer

scholarly journals Analysis of space charge and charge trap characteristics of gamma irradiated silicone rubber nanocomposites

2020 ◽  
Vol 3 (2) ◽  
pp. 44-52
Author(s):  
Baskar Thangabalan ◽  
Ramanujam Sarathi ◽  
Noureddine Harid ◽  
Huw Griffiths
Keyword(s):  
Space Charge ◽  
Silicone Rubber ◽  
Charge Trap ◽  
Rubber Nanocomposites ◽  
Gamma Irradiated

scholarly journals Investigation on space charge and charge trap characteristics of Al–epoxy nanocomposites

2020 ◽  
Vol 14 (2) ◽  
pp. 146-156 ◽  
Author(s):  
Naresh Chillu ◽  
Rengaswamy Jayaganthan ◽  
Burjupati Nageshwar Rao ◽  
Michael Danikas ◽  
Toshikatsu Tanaka ◽  
...  
Keyword(s):  
Space Charge ◽  
Epoxy Nanocomposites ◽  
Charge Trap

Excess noise, gain, and dark current in Ge avalanche photodiodes

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1070-1075
Author(s):  
D. Scansen ◽  
S. O. Kasap
Keyword(s):  
Activation Energy ◽  
Dark Current ◽  
Low Frequency ◽  
Ring Structure ◽  
Noise Factor ◽  
Excess Noise ◽  
Guard Ring ◽  
Excess Noise Factor ◽  
Wide Range ◽  
Current Activation

Measurements have been carried out on a p+ n type Ge avalanche photodiode (typical guard ring structure with channel stoppers) to obtain the excess noise factor, F; multiplication, M; and the dark current, Id over a wide range of temperatures (143–323 K). The multiplication initially increases with the illumination wavelength and peaks in the 1550 nm region because of more holes being injected into the avalanche region as the absorption depth becomes much longer than the width of the p+ region. The excess noise factor, F, at À = 1550 nm was typically slightly less than multiplication, M, and showed very little dependence on temperature. The effective ratio of electron to hole ionization coefficients was approximately 0.7–0.8, the dark current activation energy close to room temperature was about Eg, indicating that the dark current is controlled by the diffusion of minority carriers. Below ~ 232 K, dark current activation energy is about Eg/2, indicative of carrier generation in the depletion region. M varied approximately as T−n, with n depending strongly on the reverse bias. In the low-frequency range below ~ 200 Hz, the noise current followed a 1/f behavior.

Space-Charge Limited Hole Current in Germanium

1953 ◽  
Vol 90 (5) ◽  
pp. 759-763 ◽  
Author(s):  
G. C. Dacey
Keyword(s):  
Space Charge ◽  
Hole Current ◽  
Space Charge Limited

Electrical Properties of Fluorine Doped Diamond Like Carbon

2006 ◽  
Vol 514-516 ◽  
pp. 53-57
Author(s):  
Simone C. Trippe ◽  
Joana Catarina Madaleno ◽  
Luiz Pereira
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Space Charge ◽  
Potential Barrier ◽  
Diamond Like Carbon ◽  
Fluorine Concentration ◽  
Space Charge Limited Current ◽  
Differential Conductivity ◽  
Concentration Increase ◽  
Trap Energy

In this work fluorinated Diamond Like Carbon (DLC) films have been grown with different CF4 concentrations and have been studied by electrical DC measurements in a temperature range from 30 to 300 K. It was found that the samples grown with lower CF4 concentration show a small rectification, with a potential barrier lower than 0.3 V. The bulk conduction shows a trapcontrolled Space Charge Limited Current (SCLC), with characteristic trap energy between 0.08 and 0.13 eV, confirmed by the differential conductivity analysis. The activation energy (ranging from 50 to 140 meV) is also dependent on the sample fluorine concentration, decreasing with the fluorine concentration increase.

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