The relation of active nitrogen species to high-temperature limitations for (0001̄) GaN growth by radio-frequency-plasma-assisted molecular beam epitaxy

1999 ◽  
Vol 74 (25) ◽  
pp. 3836-3838 ◽  
Author(s):  
A. J. Ptak ◽  
M. R. Millecchia ◽  
T. H. Myers ◽  
K. S. Ziemer ◽  
C. D. Stinespring
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Radio Frequency Plasma ◽  
Nitrogen Species ◽  
Active Nitrogen ◽  
Frequency Plasma

Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE

2001 ◽  
Vol 693 ◽  
Author(s):  
Tomohiro Yamaguchi ◽  
Yoshiki Saito ◽  
Kenji Kano ◽  
Tomo Muramatsu ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Radio Frequency Plasma ◽  
Single Crystalline ◽  
Nitridation Process ◽  
Frequency Plasma ◽  
Step Growth

AbstractInN films were grown on sapphire (0001) substrates by radio-frequency plasma-assisted molecular beam epitaxy. The InN buffer layers deposited at low temperature were either grown on a substrate with nitridation or on a substrate without nitridation. The InN buffer layers on the nitridated substrates were always single crystalline, whereas the buffer layers on non-nitridated substrates were always polycrystalline. However, even without nitridation process, single crystalline InN films could be grown on the polycrystalline InN buffer layers; in this case, the orientation was always [1120] InN//[1120] sapphire epitaxy, which differed from the [1010] InN//[1120] sapphire epitaxy in films grown with nitridation.

RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire

2004 ◽  
Vol 831 ◽  
Author(s):  
Naoki Hashimoto ◽  
Naohiro Kikukawa ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Lattice Relaxation ◽  
Radio Frequency Plasma ◽  
Mbe Growth ◽  
Frequency Plasma ◽  
Nominal Coverage

ABSTRACTWe have grown InN quantum dots (QDs) on nitrogen-polarity (N-polarity) GaN under-layer by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and systematically investigated growth mechanism of the InN dots. The InN QDs with the N-polarity could be grown at about 500°C, which was much higher than that of previous reports on InN dots grown by MBE. When the nominal coverage of InN became more than 1 mono-layer (ML), lattice relaxation of InN occurred and high density InN dots were uniformly formed. These results indicated that InN dots were formed by Stranski-Krastanov (S-K) growth mode. For the InN deposition above about 8ML, InN dots tended to coalesce and resulted in remarakable decrease of the dots density.

Two-Step Growth of MgO Films on Sapphire (0001) Substrates by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy

2004 ◽  
Vol 21 (2) ◽  
pp. 410-413 ◽  
Author(s):  
Mei Zeng-Xia ◽  
Du Xiao-Long ◽  
Zeng Zhao-Quan ◽  
Guo Yang ◽  
Wang Jian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Radio Frequency Plasma ◽  
Frequency Plasma ◽  
Step Growth

Growth and Characterization of AlBN Polycrystalline Thin Film by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

2006 ◽  
Vol 301 ◽  
pp. 95-98 ◽  
Author(s):  
Masashi Yamashita ◽  
Yukari Ishikawa ◽  
Hitoshi Ohsato ◽  
Noriyoshi Shibata
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
High Energy ◽  
Radio Frequency Plasma ◽  
Group Iii ◽  
Frequency Plasma

An AlBN thin film with a boron content (B/(Al+B)) of 0.1 or 0.3 was obtained by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) using EB-guns as group-III element sources and an RF radical source for nitrogen supply. We compared the characteristics of the film with those of AlN and BN films. By reflective high-energy electron diffraction (RHEED), we observed ring patterns in the AlBN film. The X-ray photoelectron spectroscopy (XPS) N1s peak of the AlBN film was observed at a binding energy between the peaks of AlN and BN. There was no evidence for phase separation in the film.

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