A cryogenic amplifier for direct measurement of high-frequency signals from a single-electron transistor

1999 ◽  
Vol 74 (19) ◽  
pp. 2884-2886 ◽  
Author(s):  
S. L. Pohlen ◽  
R. J. Fitzgerald ◽  
J. M. Hergenrother ◽  
M. Tinkham
Keyword(s):  
Direct Measurement ◽  
High Frequency ◽  
Single Electron ◽  
Single Electron Transistor

Extending the high-frequency limit of a single-electron transistor by on-chip impedance transformation

1996 ◽  
Vol 53 (20) ◽  
pp. R13272-R13274 ◽  
Author(s):  
J. Pettersson ◽  
P. Wahlgren ◽  
P. Delsing ◽  
D. B. Haviland ◽  
T. Claeson ◽  
...  
Keyword(s):  
High Frequency ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Frequency Limit ◽  
High Frequency Limit ◽  
On Chip

High-frequency rectifying characteristics of metallic single-electron transistor with niobium nanodots

2021 ◽  
Author(s):  
Yoshiaki Iwata ◽  
Tomoki Nishimura ◽  
Alka Singh ◽  
Hiroaki Satoh ◽  
Hiroshi Inokawa
Keyword(s):  
High Frequency ◽  
Film Deposition ◽  
Single Electron ◽  
Nanometer Scale ◽  
Single Electron Transistor ◽  
Single Electron Transistors ◽  
Deposition Area ◽  
Simulation Based ◽  
Gate Control ◽  
Electron Transistors

Abstract Metallic single-electron transistors (SETs) with niobium nanodots were fabricated, and their high-frequency rectifying characteristics were evaluated. By reducing the gap size of the electrodes and film deposition area to nanometer scale, improved SET characteristics with gate control, and better frequency response of the rectifying current with gentler decrease than 1/f at high frequency were achieved. The comparison between the characteristics of micrometer- and nanometer-size devices are made, and the reason for their differences are discussed with a help of simulation based on the experimentally extracted parameters.

High-frequency properties of Si single-electron transistor

2012 ◽  
Author(s):  
Hiroto Takenaka ◽  
Michito Shinohara ◽  
Takafumi Uchida ◽  
Masashi Arita ◽  
Akira Fujiwara ◽  
...  
Keyword(s):  
High Frequency ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Frequency Properties

Evidence for activated conduction in a single electron transistor

2001 ◽  
Vol 89 (1) ◽  
pp. 410-419 ◽  
Author(s):  
Nicole Y. Morgan ◽  
David Abusch-Magder ◽  
Marc A. Kastner ◽  
Yasuo Takahashi ◽  
Hiroyuki Tamura ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Transistor

The current analysis of a single electron transistor based on double graphene nanoscroll island

2021 ◽  
Vol 327 ◽  
pp. 114234
Author(s):  
Vahideh Khademhosseini ◽  
Daryoosh Dideban ◽  
Mohammad Taghi Ahmadi
Keyword(s):  
Single Electron ◽  
Single Electron Transistor ◽  
Current Analysis

Investigating a Fluorobenzene Based Single Electron Transistor As a Toxic Gas Sensor

2021 ◽  
Author(s):  
Kumar Gaurav ◽  
Boddepalli SanthiBhushan ◽  
Ravi Mehla ◽  
Anurag Srivastava
Keyword(s):  
Gas Sensor ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Toxic Gas

Direct measurement of air and precipitation particle motion by very high frequency Doppler radar

Nature ◽  
1985 ◽  
Vol 316 (6030) ◽  
pp. 712-714 ◽  
Author(s):  
S. Fukao ◽  
K. Wakasugi ◽  
T. Sato ◽  
S. Morimoto ◽  
T. Tsuda ◽  
...  
Keyword(s):  
Direct Measurement ◽  
Particle Motion ◽  
High Frequency ◽  
Doppler Radar ◽  
Very High Frequency ◽  
Very High

Charge transport and photon-assisted tunneling in the NSN single-electron transistor

1994 ◽  
Vol 203 (3-4) ◽  
pp. 327-339 ◽  
Author(s):  
J.M. Hergenrother ◽  
M.T. Tuominen ◽  
J.G. Lu ◽  
D.C. Ralph ◽  
M. Tinkham
Keyword(s):  
Charge Transport ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Assisted Tunneling
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