Spin-polarized current in semimagnetic semiconductor heterostructures

1999 ◽  
Vol 74 (19) ◽  
pp. 2845-2847 ◽  
Author(s):  
V. A. Chitta ◽  
M. Z. Maialle ◽  
S. A. Leão ◽  
M. H. Degani
Keyword(s):  
Semiconductor Heterostructures ◽  
Spin Polarized

Spin Polarized Electron Transport and Emission from Strained Semiconductor Heterostructures

2001 ◽  
pp. 373-382
Author(s):  
Yu. A. Mamaev ◽  
A. V. Subashievf ◽  
Yu. P. Yashin ◽  
A. N. Ambrazhei ◽  
H.-J. Drouhin ◽  
...  
Keyword(s):  
Electron Transport ◽  
Semiconductor Heterostructures ◽  
Spin Polarized

Spectral detection of spin-polarized ultra low-energy electrons in semiconductor heterostructures

2020 ◽  
Vol 218 ◽  
pp. 113076
Author(s):  
V.A. Golyashov ◽  
V.S. Rusetsky ◽  
T.S. Shamirzaev ◽  
D.V. Dmitriev ◽  
N.V. Kislykh ◽  
...  
Keyword(s):  
Low Energy ◽  
Semiconductor Heterostructures ◽  
Spin Polarized ◽  
Low Energy Electrons ◽  
Spectral Detection

scholarly journals Shift of the collective mode of polarized graphene on a substrate using spin-sensitive response theory

2019 ◽  
Vol 59 (1) ◽  
Author(s):  
Dominik Kreil ◽  
Michaela Haslhofer ◽  
Helga M. Böhm
Keyword(s):  
Collective Mode ◽  
Near Field ◽  
Plasmon Mode ◽  
Charge Carriers ◽  
Semiconductor Heterostructures ◽  
Response Functions ◽  
Interband Transitions ◽  
S Wave ◽  
Minority Spin ◽  
Spin Polarized

The growing precision of optical and scattering experiments necessitates a better understanding of the influence of damping onto the collective mode of sheet electrons. As spin-polarized systems are of particular interest for spintronic applications, we here report spin-sensitive linear response functions of graphene, which give access to chargeand spin-density related excitations. We further calculate the reflectivity of graphene on an SiO2 surface, a setup used in s-wave scanning near-field microscopy. Increasing the partial spin-polarization of the graphene charge carriers leads to a significant broadening and shift of the plasmon mode, due to single-particle interband transitions of the minority spin carriers. We also predict an antiresonance in the longitudinal magnetic response function, similar to that of semiconductor heterostructures.

scholarly journals Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation

2010 ◽  
Vol 97 (18) ◽  
pp. 182107 ◽  
Author(s):  
C. Drexler ◽  
V. V. Bel’kov ◽  
B. Ashkinadze ◽  
P. Olbrich ◽  
C. Zoth ◽  
...  
Keyword(s):  
Microwave Radiation ◽  
Semiconductor Heterostructures ◽  
Electric Currents ◽  
Spin Polarized
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