Kinetics of surface-state laser annealing in Si by frequency-swept infrared photothermal radiometry

1999 ◽  
Vol 74 (17) ◽  
pp. 2429-2431 ◽  
Author(s):  
Mario E. Rodriguez ◽  
J. A. Garcia ◽  
A. Mandelis ◽  
C. Jean ◽  
Y. Riopel
Keyword(s):  
Surface State ◽  
Laser Annealing ◽  
Photothermal Radiometry ◽  
State Laser ◽  
Kinetics Of

scholarly journals Semiconductor technology: Kinetics of pulsed laser annealing

Nature ◽  
1985 ◽  
Vol 313 (5998) ◽  
pp. 100-100 ◽  
Author(s):  
Ian W. Boyd ◽  
Steven C. Moss
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Semiconductor Technology ◽  
Pulsed Laser Annealing ◽  
Kinetics Of

Clustering Kinetics of Arsenic and Phosphorus in Laser Annealed Silicon

1985 ◽  
Vol 45 ◽  
Author(s):  
Josef Goetzlich
Keyword(s):  
Laser Annealing ◽  
Most Probable Number ◽  
High Dose ◽  
Second Phase ◽  
Probable Number ◽  
Relaxation Phase ◽  
Post Annealing ◽  
Residual Damage ◽  
Heavily Doped ◽  
Kinetics Of

ABSTRACTHigh-dose arsenic and phosphorus ion implanted silicon was annealed either by a CW CO2 or a pulsed Nd:YAG laser creating supersaturated dopant concentrations up to 3·1021 cm−3. The relaxation of these metastable electrically active atoms was investigated during thermal post-annealing at temperatures between 600 and 1000°C for times between 3 and 106 s. In heavily doped samples which contain residual damage after laser annealing, a very fast first relaxation phase is observed followed by a much slower second phase. In samples without residual damage only this second slower phase is seen. Carrier concentration profile measurements show that the saturation concentration after the relaxation depends only on temperature and corresponds to the concentration in thermal equilibrium. Using reaction kinetics a cluster model is proposed which demonstrates that in As doped layers the most probable number of As atoms in one cluster depends on temperature (4 As atoms at 700°C, 3 As atoms at 800 - 1000°C). In P doped layers the most probable clusters contain 3 P atoms at temperatures between 700 and 900°C.

Crystallization Kinetics of Hydrogenated Amorphous Silicon During Pulsed Excimer Laser Annealing

1992 ◽  
Vol 258 ◽  
Author(s):  
S. E. Ready ◽  
J. H. Roh ◽  
J. B. Boyce ◽  
G. B. Anderson
Keyword(s):  
Amorphous Silicon ◽  
Crystallization Kinetics ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Molten Silicon ◽  
Excimer Laser Annealing ◽  
Pulsed Laser Annealing ◽  
Explosive Crystallization ◽  
Silicon Bulk ◽  
Kinetics Of

ABSTRACTExplosive crystallization of amorphous silicon (a-Si) during pulsed laser annealing occurs at an intermediate laser energy fluence above the threshold for surface melting. Mediated by a molten silicon layer which is undercooled with respect to crystalline silicon and above the melting point of a-Si, the crystallization interface drives down into the sample, sustaining itself due to the difference in the latent heats of the crystalline and amorphous silicon. Explosive crystallization has been the subject of numerous studies which have for the most part been restricted to ion implanted amorphized layers in silicon bulk samples. In this study we examine the crystallization kinetics of vapor deposited thin films of hydrogenated a-Si for films of differing hydrogen content and substrate temperature. We reevaluate current models of interface and nucleation kinetics qualitatively in light of these results. The fundamental physical mechanisms in these non-equilibrium phase transitions during pulsed laser annealing are discussed.

The effect of surface state on the kinetics of cerium-hydride formation

2007 ◽  
Vol 446-447 ◽  
pp. 567-570 ◽  
Author(s):  
H.T. Bach ◽  
T.J. Venhaus ◽  
S.N. Paglieri ◽  
H. Oona ◽  
T.H. Allen ◽  
...  
Keyword(s):  
Surface State ◽  
Hydride Formation ◽  
Kinetics Of ◽  
Effect Of Surface
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