In situ scanning tunneling microscopy study of C-induced Ge quantum dot formation on Si(100)

1999 ◽  
Vol 74 (7) ◽  
pp. 994-996 ◽  
Author(s):  
O. Leifeld ◽  
E. Müller ◽  
D. Grützmacher ◽  
B. Müller ◽  
K. Kern
Keyword(s):  
Quantum Dot ◽  
Scanning Tunneling Microscopy ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Ge Quantum Dot ◽  
Scanning Tunneling Microscopy Study

Self-Assembled InAs Islands on (AI,Ga)As, an In Situ Scanning Tunneling Microscopy Study

1999 ◽  
Vol 571 ◽  
Author(s):  
P. Ballet ◽  
J.B. Smathers ◽  
G.J. Salamo
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Self Organized ◽  
Scanning Tunneling Microscopy Study ◽  
Island Density

ABSTRACTWe report an in-situ molecular beam epitaxy – scanning tunneling microscopy study of three dimensional (3D) self organized InAs islands on (AI,Ga)As surfaces. The influence of the presence of Al atoms on the roughness of the starting surface and on the island density is shown by investigating several Al compositions. We emphasize the case of InAs/AlAs and point out the major differences between this system and the widely studied InAs/GaAs system.

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