Evidence for multiple atomic structure for the {101̄0} inversion domain boundaries in GaN layers

1999 ◽  
Vol 74 (7) ◽  
pp. 947-949 ◽  
Author(s):  
V. Potin ◽  
G. Nouet ◽  
P. Ruterana
Keyword(s):  
Atomic Structure ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Atomic structure and energy of junctions between inversion domain boundaries and stacking faults in wurtzite GaN

2003 ◽  
Vol 0 (7) ◽  
pp. 2464-2469 ◽  
Author(s):  
J. Kioseoglou ◽  
A. Béré ◽  
G.P. Dimitrakopulos ◽  
A. Serra ◽  
G. Nouet ◽  
...  
Keyword(s):  
Atomic Structure ◽  
Stacking Faults ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Inversion domain boundaries in Mn and Al dual-doped ZnO: Atomic structure and electronic properties

2017 ◽  
Vol 100 (9) ◽  
pp. 4252-4262 ◽  
Author(s):  
Joshua Hoemke ◽  
Eita Tochigi ◽  
Tetsuya Tohei ◽  
Hidehiro Yoshida ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Atomic Structure ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Doped Zno ◽  
Inversion Domain Boundaries

The Atomic Structure of Extended Defects in GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
P. Ruterana ◽  
G. Nouet
Keyword(s):  
Grain Boundaries ◽  
Atomic Structure ◽  
Stacking Faults ◽  
Threading Dislocations ◽  
Extended Defects ◽  
High Angle ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries ◽  
Edge Dislocations

AbstractGaN layers contain large densities (1010 cm−2) of threading dislocations, nanopipes, (0001) and { 1120 } stacking faults, and { 1010 } inversion domains. Three configurations have been found for pure edge dislocations, mainly inside high angle grain boundaries where the 4 atom ring cores can be stabilized. Two atomic configurations, related by a 1/6 < 1010 > stair rod dislocation, have been observed for the { 1120 } stacking fault in (Ga-Al)N layers. For the {1010} inversion domain boundaries, a configuration corresponding to the Holt model was observed, as well as another with no N-N or Ga-Ga bonds.

The Atomic Structure of the {1010} Inversion Domains in GaN/Sapphire Layers

1997 ◽  
Vol 468 ◽  
Author(s):  
V. Potin ◽  
P. Ruterana ◽  
G. Nouet ◽  
A. Salvador ◽  
H. Morkoç
Keyword(s):  
Epitaxial Layer ◽  
Atomic Structure ◽  
Boundary Plane ◽  
Type Model ◽  
Image Simulation ◽  
Atomic Models ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
20 Nm ◽  
Inversion Domain Boundaries

ABSTRACTNanometric inversion domains in GaN/Al2O3 layers have been investigated using HREM. They were found to be limited by {1010} planes and to cross the entire epitaxial layer. It has been possible, using extensive image simulation and matching to discriminate between possible atomic models for the boundary plane. It is shown that the inversion domain boundaries correspond to a Holt type model containing wrong bonds (Ga-Ga, N-N), and in that plane, each atom exhibits two such bonds. This probably can explain the small size of the domains (5–20 nm).

scholarly journals Picometre-precision atomic structure of inversion domain boundaries in GaN

2016 ◽  
pp. 564-565
Author(s):  
Benedikt Haas ◽  
Robert A. McLeod ◽  
Thomas Auzelle ◽  
Bruno Daudin ◽  
Joël Eymery ◽  
...  
Keyword(s):  
Atomic Structure ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

scholarly journals Inversion domain boundaries in wurtzite GaN

2021 ◽  
Vol 103 (16) ◽  
Author(s):  
M. M. F. Umar ◽  
Jorge O. Sofo
Keyword(s):  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
Philomela Komninou ◽  
Joseph Kioseoglou ◽  
Eirini Sarigiannidou ◽  
George P. Dimitrakopulos ◽  
Thomas Kehagias ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
High Energy ◽  
Low Energy ◽  
Inversion Domain ◽  
Resolution Electron ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

ABSTRACTThe interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.

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