Development of a low-temperature GaN chemical vapor deposition process based on a single molecular source H2GaN3
1988 ◽
Vol 1
(1)
◽
pp. 131-134
◽
1990 ◽
Vol 34
(6)
◽
pp. 806-815
◽
2007 ◽
Vol 46
(4B)
◽
pp. 2542-2553
◽
2000 ◽
Vol 44
(1.2)
◽
pp. 132-141
◽
1988 ◽
Vol 9
(3)
◽
pp. 237-249
◽
1993 ◽
Vol 140
(12)
◽
pp. 3588-3590
◽