Self-organized GaAs quantum-wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

1999 ◽  
Vol 74 (6) ◽  
pp. 780-782 ◽  
Author(s):  
Masataka Higashiwaki ◽  
Satoshi Shimomura ◽  
Satoshi Hiyamizu ◽  
Seiji Ikawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wire ◽  
Molecular Beam ◽  
Self Organized ◽  
Gaas Substrates

Selective Formation of Self-Organized InAs QDs on Patterned GaAs Substrates by Molecular Beam Epitaxy

2005 ◽  
Author(s):  
Akio Ueta ◽  
Kouichi Akahane ◽  
Sinichiro Gozu ◽  
Naokatsu Yamamoto ◽  
Naoki Ohtani
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Organized ◽  
Gaas Substrates ◽  
Selective Formation

Selective Formation of Self-Organized InAs Quantum Dots Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy

2006 ◽  
Vol 45 (4B) ◽  
pp. 3556-3559 ◽  
Author(s):  
Akio Ueta ◽  
Kouichi Akahane ◽  
Shin-ichioro Gozu ◽  
Naokatsu Yamamoto ◽  
Naoki Ohtani
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized ◽  
Gaas Substrates ◽  
Selective Formation

1.5 μm Range Self-Organized In0.65Ga0.35As/In0.52Al0.48As Quantum Wire Structures Grown on (775)B-Oriented InP Substrates by Molecular Beam Epitaxy

2002 ◽  
Vol 744 ◽  
Author(s):  
K. Hyodo ◽  
Y. Ohno ◽  
H. Kanamori ◽  
T. Kitada ◽  
S. Shimomura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wire ◽  
Room Temperature ◽  
Molecular Beam ◽  
Polarization Degree ◽  
Self Organized ◽  
Best Value ◽  
Inp Substrate ◽  
Inp Substrates ◽  
Quantum Well Layer

ABSTRACTHigh quality quantum wire (QWR) structures with an emitting wavelength in the 1.5-μm range were self-organized in an In0.65Ga0.35As/In0.52Al0.48As quantum well layer grown on a (775)B-oriented InP substrate by molecular beam epitaxy. Photoluminescence (PL) from the (775)B In0.65Ga0.35As/In0.52Al0.48As QWRs with a nominal well width of 4.8 nm was observed at 1.43 μm at 12 K, which corresponds to a PL wavelength of about 1.5 μm at room temperature. The PL peak was considerably polarized along the wire direction with a polarization degree of P [= (I∥ - I⊥) / (I∥ + I] ⊥)] = 0.14, indicating its good one-dimensionality. The FWHM of the PL peak was as small as 17 meV, which is the best value for InGaAs QWRs on InP substrates.

In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B GaAs substrates by molecular beam epitaxy

1999 ◽  
Vol 201-202 ◽  
pp. 824-827 ◽  
Author(s):  
S. Hiyamizu ◽  
Y. Ohno ◽  
M. Higashiwaki ◽  
S. Shimomura
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wire ◽  
Molecular Beam ◽  
Gaas Substrates
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