Real-time measurement of the evolution of carrier mobility in thin-film semiconductors during growth

1999 ◽  
Vol 74 (1) ◽  
pp. 58-60 ◽  
Author(s):  
R. Brenot ◽  
R. Vanderhaghen ◽  
B. Drévillon ◽  
P. Roca i Cabarrocas
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Carrier Mobility ◽  
Time Measurement ◽  
Real Time Measurement ◽  
Thin Film Semiconductors

scholarly journals Real Time Measurement of Epilayer Strain Using a Simplified Wafer Curvature Technique

1995 ◽  
Vol 406 ◽  
Author(s):  
J. A. Floro ◽  
E. Chason ◽  
S. R. Lee
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Time Measurement ◽  
Film Stress ◽  
Wafer Curvature ◽  
Thin Film Stress ◽  
Real Time Measurement ◽  
Cvd Growth

AbstractWe describe a technique for measuring thin film stress using wafer curvature that is robust, compact, easy to setup, and sufficiently sensitive to serve as a routine diagnostic of semiconductor epilayer strain in real time during MBE or CVD growth. We demonstrate, using growth of SiGe alloys on Si, that the critical thickness for misfit dislocation can clearly be resolved, and that the subsequent strain relaxation kinetics during growth or post-growth annealing are readily obtained.

scholarly journals Real Time Measurement of Epilayer Strain Using a Simplified Wafer Curvature Technique

1995 ◽  
Vol 405 ◽  
Author(s):  
J. A. Floro ◽  
E. Chason ◽  
S. R. Lee
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Time Measurement ◽  
Film Stress ◽  
Wafer Curvature ◽  
Thin Film Stress ◽  
Real Time Measurement ◽  
Cvd Growth

AbstractWe describe a technique for measuring thin film stress using wafer curvature that is robust, compact, easy to setup, and sufficiently sensitive to serve as a routine diagnostic of semiconductor epilayer strain in real time during MBE or CVD growth. We demonstrate, using growth of SiGe alloys on Si, that the critical thickness for misfit dislocation can clearly be resolved, and that the subsequent strain relaxation kinetics during growth or post-growth annealing are readily obtained.

scholarly journals Study on in-situ real-time measurement for thin film growth of organic semiconductors

2015 ◽  
Vol 64 (23) ◽  
pp. 230701
Author(s):  
Xu Jia-Jia ◽  
Hu Chun-Guang ◽  
Chen Xue-Jiao ◽  
Zhang Lei ◽  
Fu Xing ◽  
...  
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Organic Semiconductors ◽  
Film Growth ◽  
Time Measurement ◽  
Thin Film Growth ◽  
Real Time Measurement
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