Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure

1998 ◽  
Vol 73 (26) ◽  
pp. 3917-3919 ◽  
Author(s):  
L. S. Yu ◽  
Q. J. Xing ◽  
D. Qiao ◽  
S. S. Lau ◽  
K. S. Boutros ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Internal Photoemission ◽  
Gan Heterostructure

STUDY OF THE INHOMOGENEITY OF SCHOTTKY BARRIER HEIGHT IN NICKEL SILICIDE BY THE INTERNAL PHOTOEMISSION SPECTROSCOPY

2006 ◽  
Vol 20 (28) ◽  
pp. 1825-1832
Author(s):  
SHIHUA HUANG ◽  
FENGMIN WU
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Nickel Silicide ◽  
Photoemission Spectroscopy ◽  
Internal Photoemission ◽  
Fermi Level Pinning ◽  
Different Temperatures ◽  
The Individual

The inhomogeneity of Schottky barrier height (SBH) in nickel silicide/ Si contacts was observed by the internal photoemission spectroscopy. New Fowler equations were introduced to analyze the observed properties. We assumed that two or three regions with different SBHs coexist in Ni silicide/ Si contacts, and then the individual barrier height was evaluated. We found that SBH increases monotonously with the increase of annealing temperature in the case of T annealing <600° C . When T annealing is 600°C, SBH becomes maximal, then decreases monotonously with the increase of annealing temperature in the case of T annealing > 600° C . The formation of the two regions (Regions II and III) in nickel silicide/ Si Schottky contacts annealed at different temperatures, was explained by the model of the Fermi-level pinning or the metal-induced gap states.

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