Monolithic integration of a SiGe/Si modulator and multiple quantum well photodetector for 1.55 μm operation

1998 ◽  
Vol 73 (24) ◽  
pp. 3504-3505 ◽  
Author(s):  
Baojun Li ◽  
Guozheng Li ◽  
Enke Liu ◽  
Zuimin Jiang ◽  
Jie Qin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Monolithic Integration ◽  
Multiple Quantum

GaAs–AlGaAs multiple-quantum-well lasers for monolithic integration with optical modulators

1991 ◽  
Vol 69 (3-4) ◽  
pp. 491-496 ◽  
Author(s):  
F. Chatenoud ◽  
K. M. Dzurko ◽  
M. Dion ◽  
D. Moss ◽  
R. Barber ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Cavity Length ◽  
Multiple Quantum Well ◽  
Monolithic Integration ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Single Quantum Well ◽  
Quantum Well Structures

Calculations of multiple-quantum-well laser threshold current show that a common minimum current value exists for each number of wells, at an appropriate cavity length. This optimum cavity length decreases rapidly with increasing number of wells, for instance from about 300 to 110 μm for one to three wells. Granded-index separate-confinement heterostructure (GRINSCH) lasers with 1–10 quantum wells, grown by molecular beam epitaxy, show consistently low threshold currents that agree well with theoretical predictions. Lasing is achieved at 160 A cm−2 and 4.6 mA for broad-area and ridge waveguide single-quantum-well devices, respectively. The field-dependent electroabsorption of these devices when operating as wave-guide modulators indicates good modulation properties for one and three quantum-well structures, with on:off ratios above 55 at lasing wavelength. The behavior becomes more complex with increasing number of wells. This systematic study of discrete multiple-quantum-well lasers and modulators demonstrates that GRINSCH structures with 1–3 wells are the most suitable for monolithic integration. Design rules for the laser cavity are also presented for numbers of wells ranging from 1 to 10.

Monolithic integration of an AlGaAs/GaAs multiple quantum well distributed feedback laser and a grating coupler for surface emission

1987 ◽  
Vol 51 (15) ◽  
pp. 1200-1202 ◽  
Author(s):  
Susumu Noda ◽  
Keisuke Kojima ◽  
Kazumasa Mitsunaga ◽  
Kazuo Kyuma ◽  
Koich Hamanaka ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Monolithic Integration ◽  
Distributed Feedback ◽  
Multiple Quantum ◽  
Grating Coupler ◽  
Distributed Feedback Laser ◽  
Surface Emission

Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing

1997 ◽  
Vol 33 (1) ◽  
pp. 45-55 ◽  
Author(s):  
A. McKee ◽  
C.J. McLean ◽  
G. Lullo ◽  
A.C. Bryce ◽  
R.M. De La Rue ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Monolithic Integration ◽  
Multiple Quantum ◽  
Quantum Well Structures

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures
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