scholarly journals Room-temperature pulsed operation of an electrically injected InGaN/GaN multi-quantum well distributed feedback laser

1998 ◽  
Vol 73 (15) ◽  
pp. 2158-2160 ◽  
Author(s):  
Daniel Hofstetter ◽  
Robert L. Thornton ◽  
Linda T. Romano ◽  
David P. Bour ◽  
Michael Kneissl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Distributed Feedback ◽  
Distributed Feedback Laser ◽  
Multi Quantum Well

A Novel 1.3-µm HighT0AlGaInAs/InP Strained-Compensated Multi-Quantum Well Complex-Coupled Distributed Feedback Laser Diode

1999 ◽  
Vol 38 (Part 1, No. 9A) ◽  
pp. 5096-5100 ◽  
Author(s):  
Bo Chen ◽  
Wei Wang ◽  
Xiao-Jie Wang ◽  
Jin-Yuan Zhang ◽  
Zhou Fan
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Distributed Feedback ◽  
Distributed Feedback Laser ◽  
Multi Quantum Well

10 GHz Tunable Slow Light in Multi-Quantum Well Distributed Feedback Laser

2006 ◽  
Author(s):  
C. T. Lin ◽  
P. C. Peng ◽  
J. H. Chen ◽  
C. F. Peng ◽  
C. C. Chiang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Slow Light ◽  
Distributed Feedback ◽  
Distributed Feedback Laser ◽  
Multi Quantum Well

1.5μm λ/4 shifted multiple quantum well distributed feedback laser diodes

1988 ◽  
Vol 24 (23) ◽  
pp. 1408 ◽  
Author(s):  
T. Sasaki ◽  
S. Takano ◽  
N. Henmi ◽  
H. Yamada ◽  
M. Kitamura ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Distributed Feedback ◽  
Multiple Quantum ◽  
Distributed Feedback Laser

scholarly journals Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

2021 ◽  
Vol 118 (22) ◽  
pp. 221103
Author(s):  
P. Schmiedeke ◽  
A. Thurn ◽  
S. Matich ◽  
M. Döblinger ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Threshold Strain ◽  
Low Threshold ◽  
Nanowire Lasers ◽  
Multi Quantum Well

1.5 μm multiple-quantum-well distributed feedback laser diodes grown on corrugated InP by MOVPE

1988 ◽  
Vol 24 (16) ◽  
pp. 1045 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
N. Henmi ◽  
T. Sasaki ◽  
H. Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Distributed Feedback ◽  
Multiple Quantum ◽  
Distributed Feedback Laser

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

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