Resonant Raman scattering in polycrystalline silicon thin films

1998 ◽  
Vol 73 (12) ◽  
pp. 1718-1720 ◽  
Author(s):  
V. Paillard ◽  
P. Puech ◽  
M. A. Laguna ◽  
P. Temple-Boyer ◽  
B. Caussat ◽  
...  
2011 ◽  
Vol 23 (33) ◽  
pp. 334205 ◽  
Author(s):  
M F Cerqueira ◽  
M I Vasilevskiy ◽  
F Oliveira ◽  
A G Rolo ◽  
T Viseu ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (77) ◽  
pp. 73589-73594 ◽  
Author(s):  
Abdul Majid ◽  
J. J. Zhu ◽  
Usman Ali Rana ◽  
Salah Ud-Din Khan

200 keV ions of V, Cr and Co were implanted into wurtzite GaN/sapphire thin films at fluences of 5 × 1014 cm−2, 5 × 1015 cm−2 and 5 × 1016 cm−2.


2014 ◽  
Vol 115 ◽  
pp. 172-175 ◽  
Author(s):  
Ming Liu ◽  
Shanyong Bao ◽  
Guang Yang ◽  
Lu Lu ◽  
Shaodong Cheng ◽  
...  

1999 ◽  
Vol 337 (1-2) ◽  
pp. 93-97 ◽  
Author(s):  
V Paillard ◽  
P Puech ◽  
P Temple-Boyer ◽  
B Caussat ◽  
E Scheid ◽  
...  

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