Use of Kubo formalism to study transport beyond the Born approximation: Application to low-temperature transport in Si metal–oxide–semiconductor field-effect transistors

Yifei Zhang; Jasprit Singh

doi:10.1063/1.122209

Use of Kubo formalism to study transport beyond the Born approximation: Application to low-temperature transport in Si metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.122209 ◽

1998 ◽

Vol 73 (11) ◽

pp. 1577-1579 ◽

Cited By ~ 1

Author(s):

Yifei Zhang ◽

Jasprit Singh

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Born Approximation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Suppression of Metamorphoses of Metal/High-kGate Stack by Low-Temperature, Cl-Free SiN Offset Spacer, and Its Impact on Scaled Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2375 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2375-2378

Author(s):

Nobuyuki Mise ◽

Takeo Matsuki ◽

Toshinari Watanabe ◽

Tetsu Morooka ◽

Takahisa Eimori ◽

...

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4712564 ◽

2012 ◽

Vol 100 (19) ◽

pp. 192101 ◽

Cited By ~ 9

Author(s):

D. R. Gajula ◽

D. W. McNeill ◽

B. E. Coss ◽

H. Dong ◽

S. Jandhyala ◽

...

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2117 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2117-2121 ◽

Cited By ~ 7

Author(s):

Takashi Uehara ◽

Hiroshi Matsubara ◽

Ryosho Nakane ◽

Satoshi Sugahara ◽

Shin-ichi Takagi

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Source

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Low temperature noise spectroscopy of 0.1 μm partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.2732685 ◽

2007 ◽

Vol 101 (10) ◽

pp. 104511 ◽

Cited By ~ 34

Author(s):

I. Lartigau ◽

J. M. Routoure ◽

W. Guo ◽

B. Cretu ◽

R. Carin ◽

...

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Noise Spectroscopy ◽

Temperature Noise

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Design and Analysis of Power Low-Temperature Polysilicon Lateral Double-Diffusion Metal Oxide Semiconductor Field Effect Transistors with Shielding-Trench Structure

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.084201 ◽

2013 ◽

Vol 52 (8R) ◽

pp. 084201

Author(s):

Jyh-Ling Lin ◽

Cang-Ting Lin

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Double Diffusion ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Trench Structure

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Low temperature recombination lifetime in Si metal oxide semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.92644 ◽

1981 ◽

Vol 39 (2) ◽

pp. 155-156

Author(s):

B. Zetterlund ◽

A. J. Steckl

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Recombination Lifetime

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The use of Kubo formula to examine low temperature transport limited by interface roughness and phonons in metal–oxide–semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.369529 ◽

1999 ◽

Vol 85 (4) ◽

pp. 2213-2220

Author(s):

Yifei Zhang ◽

Jasprit Singh

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Interface Roughness ◽

Oxide Semiconductor ◽

Kubo Formula

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Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2828134 ◽

2007 ◽

Vol 91 (26) ◽

pp. 263512 ◽

Cited By ~ 6

Author(s):

Chris Beer ◽

Terry Whall ◽

Evan Parker ◽

David Leadley ◽

Brice De Jaeger ◽

...

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Homostructured ZnO-based metal-oxide-semiconductor field-effect transistors deposited at low temperature by vapor cooling condensation system

Applied Surface Science ◽

10.1016/j.apsusc.2014.12.179 ◽

2015 ◽

Vol 354 ◽

pp. 71-73 ◽

Cited By ~ 7

Author(s):

Tzu-Shun Lin ◽

Ching-Ting Lee

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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GaAs Metal–Oxide–Semiconductor Field Effect Transistors Fabricated with Low-Temperature Liquid-Phase-Deposited SiO2

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.5561 ◽

2002 ◽

Vol 41 (Part 1, No. 9) ◽

pp. 5561-5562 ◽

Cited By ~ 5

Author(s):

Chien-Jung Huang ◽

Zhen-Song Ya ◽

Jui-Hong Horng ◽

Mau-Phon Houng ◽

Yeong-Her Wang

Keyword(s):

Liquid Phase ◽

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Liquid

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