Observation of confinement-dependent exciton binding energy of GaN quantum dots

1998 ◽  
Vol 73 (8) ◽  
pp. 1104-1106 ◽  
Author(s):  
Peter Ramvall ◽  
Satoru Tanaka ◽  
Shintaro Nomura ◽  
Philippe Riblet ◽  
Yoshinobu Aoyagi
Keyword(s):  
Quantum Dots ◽  
Binding Energy ◽  
Exciton Binding Energy

The polaronic shift of exciton binding energy in quantum dots with a degenerate valence band

2002 ◽  
Vol 14 (48) ◽  
pp. 13357-13365 ◽  
Author(s):  
Arshak L Vartanian ◽  
Anna L Asatryan ◽  
Albert A Kirakosyan
Keyword(s):  
Quantum Dots ◽  
Binding Energy ◽  
Valence Band ◽  
Exciton Binding Energy

LOCALIZED EXCITONS IN SELF-ASSEMBLED InxGa1-xN QUANTUM DOTS

2005 ◽  
Vol 19 (12) ◽  
pp. 589-598
Author(s):  
XIAN-QI DAI ◽  
FENG-ZHEN HUANG ◽  
JUN-JIE SHI
Keyword(s):  
Quantum Dots ◽  
Binding Energy ◽  
Variational Approach ◽  
Structural Parameters ◽  
Exciton Binding Energy ◽  
Mass Approximation ◽  
Energy Maximum ◽  
Localized Excitons ◽  
The Relationship ◽  
Good Agreement

Within the framework of effective-mass approximation, the exciton states localized in cylindrical InGaN quantum dots (QDs) are investigated using a variational approach. The relationship between the exciton states and structural parameters of QDs with radius R and height L are studied in detail. The numerical results show that the exciton binding energy is sensitive to the ratio of R/L for a QD with a given volume. There is a maximum in the binding energy, where the electrons and holes are the most efficiently confined in the QDs with special structural parameters. The binding energy maximum can be obtained at about L = 1.7 nm for different QD volumes. The exciton binding energy and emission wavelength depend sensitively on structural parameters and the In content in the In x Ga 1-x N active layer. Our calculated emission wavelengths are in good agreement with experimental data.

Exciton binding energy in type II quantum dots

2007 ◽  
Vol 4 (2) ◽  
pp. 385-388 ◽  
Author(s):  
P. F. Gomes ◽  
M. P. F. Godoy ◽  
A. B. Veloso ◽  
M. K. K. Nakaema ◽  
F. Iikawa ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Binding Energy ◽  
Exciton Binding Energy ◽  
Type Ii

Negative bi-exciton binding energy in (211)B InAs/GaAs piezoelectric quantum dots

2007 ◽  
Author(s):  
G.E. Dialynas ◽  
C. Xenogianni ◽  
E. Trichas ◽  
P.G. Savvidis ◽  
G. Constantinidis ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Binding Energy ◽  
Exciton Binding Energy

Temperature-Dependent Electroabsorption and Electrophotoluminescence and Exciton Binding Energy in MAPbBr3 Perovskite Quantum Dots

2019 ◽  
Vol 123 (32) ◽  
pp. 19927-19937 ◽  
Author(s):  
Shailesh Rana ◽  
Kamlesh Awasthi ◽  
Sumit S. Bhosale ◽  
Eric Wei-Guang Diau ◽  
Nobuhiro Ohta
Keyword(s):  
Quantum Dots ◽  
Binding Energy ◽  
Exciton Binding Energy ◽  
Temperature Dependent ◽  
Perovskite Quantum Dots
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