Chemical vapor deposition of diamond growth using a chemical precursor

1998 ◽  
Vol 73 (8) ◽  
pp. 1050-1052 ◽  
Author(s):  
Eric Leroy ◽  
Olivier M. Küttel ◽  
Louis Schlapbach ◽  
Luc Giraud ◽  
Titus Jenny
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth

scholarly journals Unusual Dependence of the Diamond Growth Rate on the Methane Concentration in the Hot Filament Chemical Vapor Deposition Process

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 426
Author(s):  
Byeong-Kwan Song ◽  
Hwan-Young Kim ◽  
Kun-Su Kim ◽  
Jeong-Woo Yang ◽  
Nong-Moon Hwang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Lower Growth ◽  
Filament Temperature ◽  
Diamond Phase ◽  
Hot Filament

Although the growth rate of diamond increased with increasing methane concentration at the filament temperature of 2100 °C during a hot filament chemical vapor deposition (HFCVD), it decreased with increasing methane concentration from 1% CH4 –99% H2 to 3% CH4 –97% H2 at 1900 °C. We investigated this unusual dependence of the growth rate on the methane concentration, which might give insight into the growth mechanism of a diamond. One possibility would be that the high methane concentration increases the non-diamond phase, which is then etched faster by atomic hydrogen, resulting in a decrease in the growth rate with increasing methane concentration. At 3% CH4 –97% H2, the graphite was coated on the hot filament both at 1900 °C and 2100 °C. The graphite coating on the filament decreased the number of electrons emitted from the hot filament. The electron emission at 3% CH4 –97% H2 was 13 times less than that at 1% CH4 –99% H2 at the filament temperature of 1900 °C. The lower number of electrons at 3% CH4 –97% H2 was attributed to the formation of the non-diamond phase, which etched faster than diamond, resulting in a lower growth rate.

Diamond Growth by Dual Hollow Cathode Arc Chemical Vapor Deposition

1997 ◽  
Vol 36 (Part 2, No. 10B) ◽  
pp. L1406-L1409 ◽  
Author(s):  
Gou-Tsau Liang ◽  
Franklin Chau-Nan Hong
Keyword(s):  
Chemical Vapor Deposition ◽  
Hollow Cathode ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Cathode Arc

Effect of Argon during Diamond Deposition by Hot Filament Chemical Vapor Deposition

2016 ◽  
Vol 869 ◽  
pp. 721-726 ◽  
Author(s):  
Divani C. Barbosa ◽  
Ursula Andréia Mengui ◽  
Mauricio R. Baldan ◽  
Vladimir J. Trava-Airoldi ◽  
Evaldo José Corat
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Gas Mixture ◽  
X Ray Diffraction ◽  
Hot Filament ◽  
Argon Content

The effect of argon content upon the growth rate and the properties of diamond thin films grown with different grains sizes are explored. An argon-free and argon-rich gas mixture of methane and hydrogen is used in a hot filament chemical vapor deposition reactor. Characterization of the films is accomplished by scanning electron microscopy, Raman spectroscopy and high-resolution x-ray diffraction. An extensive comparison of the growth rate values and films morphologies obtained in this study with those found in the literature suggests that there are distinct common trends for microcrystalline and nanocrystalline diamond growth, despite a large variation in the gas mixture composition. Included is a discussion of the possible reasons for these observations.

Diamond growth on thin Ti wafers via chemical vapor deposition

1995 ◽  
Vol 10 (11) ◽  
pp. 2685-2688 ◽  
Author(s):  
Qijin Chen ◽  
Zhangda Lin
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Titanium Substrate ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Diamond Growth ◽  
X Ray ◽  
Hot Filament ◽  
Insight Into

Diamond film was synthesized on thin Ti wafers (as thin as 40 μm) via hot filament chemical vapor deposition (HFCVD). The hydrogen embrittlement of the titanium substrate and the formation of a thick TiC interlayer were suppressed. A very low pressure (133 Pa) was employed to achieve high-density rapid nucleation and thus to suppress the formation of TiC. Oxygen was added to source gases to lower the growth temperature and therefore to slow down the hydrogenation of the thin Ti substrate. The role of the very low pressure during nucleation is discussed, providing insight into the nucleation mechanism of diamond on a titanium substrate. The as-grown diamond films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, and x-ray analysis.

scholarly journals Engineering quantum-coherent defects: The role of substrate miscut in chemical vapor deposition diamond growth

2020 ◽  
Vol 117 (19) ◽  
pp. 194001
Author(s):  
Simon A. Meynell ◽  
Claire A. McLellan ◽  
Lillian B. Hughes ◽  
Wenbo Wang ◽  
Tom E. Mates ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Chemical Vapor Deposition Diamond

Bias Controlled Hot Filament Chemical Vapor Deposition of Diamond Thin Film on Various Substrates

1989 ◽  
Vol 162 ◽  
Author(s):  
Y. H. Lee ◽  
G.-H. Ma ◽  
K. J. Bachmann ◽  
J. T. Glass
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Lattice Parameter ◽  
Substrate Material ◽  
Diamond Growth ◽  
Interfacial Layers ◽  
Defect Densities

ABSTRACTThe growth of diamond films on Si(001), polycrystalline Ni, Mo, Ta, and W substrates by biased controlled chemical vapor deposition is discussed. Biasing effects were examined using the Si(001) substrates. The film quality as judged by Raman spectroscopy and scanning electron microscopy depended strongly on the biasing conditions. Under low current reverse bias conditions, highly faceted cubooctahedral polycrystalline diamond growth exhibiting a single sharp Raman line at 1332 cm-1 was obtained. Transmission electron microscopy indicated that these films contained relatively low defect densities and no significant interfacial layers. Biasing into high current conditions which created a plasma resulted in multiply twinned, microcrystalline growth incorporating sp2 bonded carbon into the diamond film. Such films were found to contain very high defect densities and a relatively thick interfacial layer. An investigation of the effects of substrate material was also conducted. Films grown on Si, Ni and W exhibited the best quality. The relationship between this quality and substrate properties such as surface energy and lattice parameter is discussed.

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