Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers

1998 ◽  
Vol 73 (7) ◽  
pp. 969-971 ◽  
Author(s):  
L. Harris ◽  
D. J. Mowbray ◽  
M. S. Skolnick ◽  
M. Hopkinson ◽  
G. Hill
Keyword(s):  
Quantum Dot ◽  
Emission Spectra ◽  
Quantum Dot Lasers ◽  
Mode Structure ◽  
Self Organized

In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties

1999 ◽  
Vol 46 (5) ◽  
pp. 871-883 ◽  
Author(s):  
P. Bhattacharya ◽  
K.K. Kamath ◽  
J. Singh ◽  
D. Klotzkin ◽  
J. Phillips ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Small Signal ◽  
Quantum Dot Lasers ◽  
Signal Modulation ◽  
Self Organized ◽  
Small Signal Modulation

scholarly journals Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates

1999 ◽  
Vol 74 (10) ◽  
pp. 1355-1357 ◽  
Author(s):  
K. K. Linder ◽  
J. Phillips ◽  
O. Qasaimeh ◽  
X. F. Liu ◽  
S. Krishna ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Si Substrates ◽  
Self Organized

Nonlinear Carrier Relaxation in a Single GaAs Self-organized Quantum Dot

2002 ◽  
Vol 737 ◽  
Author(s):  
T. Kuroda ◽  
S. Sanguinetti ◽  
F. Minami ◽  
M. Gurioli ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Quantum Dot ◽  
Time Resolution ◽  
Delay Time ◽  
Emission Spectra ◽  
Excitation Intensity ◽  
Carrier Relaxation ◽  
Self Organized ◽  
Carrier Scattering

ABSTRACTWe resolved a photoemission signal from a single self-organized GaAs/Al0.3Ga0.7As quantum dot (QD) with picosecond time resolution. The emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Through the analysis we can determine the carrier relaxation time as a function of population of photoinjected carriers. Enhancement of the intra-dot carrier relaxation is demonstrated to be due to the carrier-carrier scattering inside a single QD.

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