Analysis of composition fluctuations on an atomic scale in Al0.25Ga0.75N by high-resolution transmission electron microscopy

1998 ◽  
Vol 73 (7) ◽  
pp. 930-932 ◽  
Author(s):  
B. Neubauer ◽  
A. Rosenauer ◽  
D. Gerthsen ◽  
O. Ambacher ◽  
M. Stutzmann
1998 ◽  
Vol 05 (03n04) ◽  
pp. 739-745
Author(s):  
Tokushi Kizuka

The atomic processes in mechanical interaction were visualized by time-resolved high resolution transmission electron microscopy at a spatial resolution of 0.2 nm and a time resolution of 1/60 s. Nanometer-sized tips of gold were approached, contacted, bonded, deformed and fractured inside a 200 kV electron microscope using a piezo-driving specimen holder. The crystallographic boundary formed after the contact. A few layers near the surfaces and bonding boundaries were responsible for the approach, contact and bonding processes. Atomic scale mechanical tests, such as the friction test, compressing, tensile and shear deformation tests, were proposed. A new type of mechanical processing at one-atomic-layer resolution was demonstrated. Atomic scale contact or noncontact type surface scanning similar to that in atomic force microscopy was also performed with the gold tips.


1989 ◽  
Vol 159 ◽  
Author(s):  
Jane G. Zhu ◽  
Stuart McKeman ◽  
Chris J. Palmstrøm ◽  
C. Barry Carter

ABSTRACTCoGa/GaAs and ErAs/GaAs grown by molecular-beam epitaxy have been studied using high-resolution transmission electron microscopy (HRTEM). The epitactic interfaces have been shown to be abrupt on the atomic scale. Computer simulations of the HRTEM images have been obtained for different interface structures under various specimen and image conditions. Practical problems in the comparison between the simulated and experimental images are discussed.


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