scholarly journals Characterization of charged defects in CdxHg1−xTe and CdTe crystals by electron beam induced current and scanning tunneling spectroscopy

1998 ◽  
Vol 72 (17) ◽  
pp. 2129-2131 ◽  
Author(s):  
G. Panin ◽  
C. Dı́az-Guerra ◽  
J. Piqueras
Keyword(s):  
Electron Beam ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Induced Current ◽  
Electron Beam Induced Current ◽  
Charged Defects

Characterization of 4H-SiC pn Structures with Unstable Excess Current

2015 ◽  
Vol 821-823 ◽  
pp. 648-651
Author(s):  
Anatoly M. Strel'chuk ◽  
Eugene B. Yakimov ◽  
Alexander A. Lavrent’ev ◽  
Evgenia V. Kalinina ◽  
Alexander A. Lebedev
Keyword(s):  
Electron Beam ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Electron ◽  
Induced Current ◽  
Excess Current ◽  
Forward Current ◽  
Electron Beam Induced Current

4H-SiC p+nn+ structures fabricated by implantation of Al into a commercial n-type 4H-SiC epitaxial layer doped to (3-5)Ÿ1015cm-3 have been studied. Structures with unstable excess forward current were characterized by electron beam induced current (EBIC) and secondary electron (SE) methods and by Auger-electron spectroscopy (AES). Numerous defects were found with a depth which exceed the thickness of the p+-layer. Also, it was demonstrated that the concentration of carbon on the SiC surface always exceeds that of silicon, which may be the reason for the initially unstable conductivity via the defects.

Characterization of GaAs wafers and epilayers with electron‐beam‐induced current, etching, and reflected light

1987 ◽  
Vol 62 (10) ◽  
pp. 4248-4254 ◽  
Author(s):  
L. D. Partain ◽  
S. M. Dean ◽  
B. L. Berard ◽  
P. S. McLeod ◽  
L. M. Fraas ◽  
...  
Keyword(s):  
Electron Beam ◽  
Induced Current ◽  
Reflected Light ◽  
Electron Beam Induced Current
Sign in / Sign up

Export Citation Format

Share Document