Temperature dependence of the Fermi level in low-temperature-grown GaAs

1998 ◽  
Vol 72 (15) ◽  
pp. 1866-1868 ◽  
Author(s):  
Y. H. Chen ◽  
Z. Yang ◽  
Z. G. Wang ◽  
R. G. Li
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Temperature Dependence ◽  
Low Temperature Grown Gaas

Fermi level of low-temperature-grown GaAs on Si-δ-doped GaAs

1995 ◽  
Vol 51 (23) ◽  
pp. 17215-17218 ◽  
Author(s):  
T. M. Hsu ◽  
W. C. Lee ◽  
J. R. Wu ◽  
J.-I. Chyi
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Gaas On Si ◽  
Low Temperature Grown Gaas

Interaction of Thin Ga Overlayer with InP(110): a Photoemission Study

1988 ◽  
Vol 143 ◽  
Author(s):  
R. Cao ◽  
K. Miyano ◽  
T. Kendelewicz ◽  
I. Lindau ◽  
W. E. Spicer
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Replacement Reaction ◽  
High Coverage ◽  
Fermi Level Pinning ◽  
Different Temperatures ◽  
Photoemission Study ◽  
Low Coverage

AbstractPhotoemission study of the Ga/InP(110) interface, in particular at the In 4d cooper minimum (CM) reveals that the growth of the deposited Ga on InP(110) at room temperature (RT) has two modes: chemisorption at low coverage and metallic island formation at high coverage, whereas the Ga overlayer is much more uniform at 80K low temperature (LT). A replacement reaction between Ga and InP is found to take place only underneath the Ga islands. Metal screening from the Ga islands is suggested to weaken the substrate bonds and enhance the replacement reaction. Distinct behavior of Fermi level pinning has been observed at different temperatures. This is correlated with the temperature dependence of the overlayer morphology as well as the interfacial reaction.

Ultrafast photoconductors from low-temperature-grown GaAs for terahertz components activated by femtosecond 1-μm wavelength laser pulses

2012 ◽  
Vol 9 (7) ◽  
pp. 1693-1695
Author(s):  
Juozas Adamonis ◽  
Klemensas Bertulis ◽  
Andrius Bičiūnas ◽  
Ramūnas Adomavičius ◽  
Arūnas Krotkus
Keyword(s):  
Low Temperature ◽  
Laser Pulses ◽  
Low Temperature Grown Gaas

The Microscopic Structure Of Shallow Donors In Silicon Carbide

1996 ◽  
Vol 442 ◽  
Author(s):  
J.-M. Spaeth ◽  
S. Greulich-Weber ◽  
M. März ◽  
E. N. Kalabukhova ◽  
S. N. Lukin
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Double Resonance ◽  
Epr Spectra ◽  
Electron Nuclear Double Resonance ◽  
Paramagnetic Resonance ◽  
Vacancy Pair ◽  
Temperature Spectra ◽  
Electron Paramagnetic

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.

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