In situ growth of highly oriented Pb(Zr0.5Ti0.5)O3 thin films by low-temperature metal–organic chemical vapor deposition

1998 ◽  
Vol 72 (13) ◽  
pp. 1572-1574 ◽  
Author(s):  
G.-R. Bai ◽  
I-Fei Tsu ◽  
A. Wang ◽  
C. M. Foster ◽  
C. E. Murray ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
In Situ Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ChemInform Abstract: In situ Growth of Epitaxial YAlO3 Thin Films by Metal-Organic Chemical Vapor Deposition.

ChemInform ◽  
2010 ◽  
Vol 24 (15) ◽  
pp. no-no
Author(s):  
B. HAN ◽  
D. A. NEUMAYER ◽  
D. L. SCHULZ ◽  
B. J. HINDS ◽  
T. J. MARKS ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
In Situ Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In situ single-liquid-source metal-organic chemical vapor deposition of (La0.8Ca0.2)MnO3 giant magnetoresistive films

1995 ◽  
Vol 10 (9) ◽  
pp. 2166-2169 ◽  
Author(s):  
Y.Q. Li ◽  
J. Zhang ◽  
S. Pombrik ◽  
S. DiMascio ◽  
W. Stevens ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Organic Solution ◽  
Liquid Source ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

A large magnetoresistance change (ΔR/RH) of −550% has been observed at 270 K in (La0.8Ca0.2)MnO3 thin films. The films were prepared in situ on LaAlO3 substrates by single-liquid-source metal-organic chemical vapor deposition. M(thd)n (M = La, Ca, and Mn, and n = 2, 3) were dissolved together in an organic solution and used as precursors for the deposition of (La0.8Ca0.2)MnO3 thin films. Deposition was conducted at an oxygen partial pressure of 1.2 Torr and a substrate temperature ranging from 600 °C to 700 °C. The mechanism for the large magnetoresistance change in this manganese oxide is briefly discussed.

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