A novel self-consistent simulator for current-density–voltage characteristics of semiconductor field emitters

1998 ◽  
Vol 72 (10) ◽  
pp. 1220-1222 ◽  
Author(s):  
A. DasGupta ◽  
D. Arslan ◽  
A. Sigurdardottir ◽  
H. L. Hartnagel
2021 ◽  
Vol 130 (14) ◽  
pp. 144302
Author(s):  
J. Ludwick ◽  
M. Cahay ◽  
N. Hernandez ◽  
H. Hall ◽  
J. O’Mara ◽  
...  

2019 ◽  
Vol 89 (1) ◽  
pp. 142
Author(s):  
Г.Г. Соминский ◽  
В.Е. Сезонов ◽  
С.П. Тарадаев ◽  
С.Н. Вдовичев

AbstractNovel field emitters made of contacting hafnium and platinum layers have been studied. Calculations aimed at optimizing the characteristics of the multilayer emitters have been conducted. Field emission currents up to 2.0–2.5 mA at a (tentative) current density of up to 200 A/cm^2 have been achieved. It has been shown that the field emission current can be significantly increased by summing current from several multilayer systems.


Author(s):  
M.N. Thompson

Application trends in the 1990's will continue to be driven by the pursuit of materials characterisation to higher levels of structural and chemical resolution. Due to the information-limit and current-density limitations of LaB6 sources, further advancements will require better electron guns. The choice of guns includes Cold, Thermally-assisted Cold and Schottky Field Emitters. For SEM and STEM the Cold Field Emitter is a reasonable choice, because the primary criterion for small-probe techniques is current density. This logic doesn't apply to TEMs, which require both high current density for small probes and high total current for large-area illumination at various TEM magnification levels. Table 1 compares Schottky and Cold Field emitters in different applications and microscope construction. In view of its performance (Figs. 1 and 2), the Field Emission Gun is expected to have a major impact on TEM in the 1990's.


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