Fabrication of a low-operating voltage diamond thin film metal–semiconductor–metal photodetector by laser writing lithography

1998 ◽  
Vol 72 (10) ◽  
pp. 1131-1133 ◽  
Author(s):  
Wei Jiang ◽  
Jaeshin Ahn ◽  
Feng-Lan Xu ◽  
Chin-Yi Liaw ◽  
Yuen-Chuen Chan ◽  
...  
Keyword(s):  
Thin Film ◽  
Operating Voltage ◽  
Laser Writing ◽  
Diamond Thin Film ◽  
Metal Semiconductor Metal

Visible-Blind Metal-Semiconductor-Metal Structured Deep-Ultraviolet Photodetectors Using Single-Crystalline Diamond Thin Film

2007 ◽  
Vol 546-549 ◽  
pp. 1759-1762
Author(s):  
Mei Yong Liao ◽  
Yasuo Koide
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Visible Light ◽  
Persistent Photoconductivity ◽  
Single Crystalline ◽  
Diamond Thin Film ◽  
Metal Semiconductor Metal ◽  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors ◽  
Visible Blind

Metal-semiconductor-metal (MSM) planar photodiodes and photoconductors were fabricated on unintentionally doped homoepitaxial diamond thin films deposited on Ib and IIa-type diamond substrated. The MSM photoconductor on the epilayer grown on the Ib-type substrate exhibits the highest discrimination ratio up to 108 between 210 nm and visible light and a photocurrent gain around 33 at 220 nm. The persistent photoconductivity is rather week for such kind of photoconductor.

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

2021 ◽  
Vol 23 (09) ◽  
pp. 1078-1085
Author(s):  
A. Kanni Raj ◽  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Barium Zirconate ◽  
Operating Voltage ◽  
Metal Oxide Thin Film

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.

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