Observation of the single electron charging effect in nanocrystalline silicon at room temperature using atomic force microscopy

1998 ◽  
Vol 72 (9) ◽  
pp. 1089-1091 ◽  
Author(s):  
Masanori Otobe ◽  
Hiroshi Yajima ◽  
Shunri Oda
Keyword(s):  
Atomic Force Microscopy ◽  
Room Temperature ◽  
Nanocrystalline Silicon ◽  
Single Electron ◽  
Force Microscopy ◽  
Atomic Force ◽  
Charging Effect

Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 2334-2337 ◽  
Author(s):  
Yoshitaka Gotoh ◽  
Kazuhiko Matsumoto ◽  
Vladimir Bubanja ◽  
Francisco Vazquez ◽  
Tatsuro Maeda ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Room Temperature ◽  
Oxidation Process ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Force Microscopy ◽  
Atomic Force

ATOMIC FORCE MICROSCOPY AND XRD ANALYSIS OF SILVER FILMS DEPOSITED BY THERMAL EVAPORATION

2006 ◽  
Vol 20 (02) ◽  
pp. 217-231 ◽  
Author(s):  
MUHAMMAD MAQBOOL ◽  
TAHIRZEB KHAN
Keyword(s):  
Atomic Force Microscopy ◽  
Grain Size ◽  
Surface Characterization ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Average Grain Size ◽  
20 Nm

Thin films of pure silver were deposited on glass substrate by thermal evaporation process at room temperature. Surface characterization of the films was performed using X-ray diffraction (XRD) and atomic force microscopy (AFM). Thickness of the films varied between 20 nm and 72.8 nm. XRD analysis provided a sharp peak at 38.75° from silver. These results indicated that the films deposited on glass substrates at room temperature are crystalline. Three-dimension and top view pictures of the films were obtained by AFM to study the grain size and its dependency on various factors. Average grain size increased with the thickness of the deposited films. A minimum grain size of 8 nm was obtained for 20 nm thick films, reaching 41.9 nm when the film size reaches 60 nm. Grain size was calculated from the information provided by the XRD spectrum and averaging method. We could not find any sequential variation in the grain size with the growth rate.

Atomic force microscopy of slip lines in FeAl

1995 ◽  
Vol 10 (9) ◽  
pp. 2159-2161 ◽  
Author(s):  
J.H. Schneibel ◽  
L. Martínez
Keyword(s):  
Atomic Force Microscopy ◽  
Atomic Force Microscope ◽  
Room Temperature ◽  
Frequency Distributions ◽  
Slip Lines ◽  
Force Microscopy ◽  
Atomic Force ◽  
Shear Strains

Fe–40 at. % Al–0.1 at. % B specimens were polished flat, strained at room temperature, and examined in an atomic force microscope. The angles of height contours perpendicular to the slip lines were interpreted as shear strains and were statistically evaluated. The frequency distributions of these shear strains correlated well with the macroscopic strains. The maximum shear strains found were not much larger than the macroscopic strains. In particular, no steep slip steps corresponding to large local shears were found.

Towards a Room Temperature Organic Spin Valve: Structural, Magnetic and Transport Properties of Fe3O4/PTCTE/Co Devices

2011 ◽  
Vol 1359 ◽  
Author(s):  
Mathieu Palosse ◽  
Elena Bedel-Pereira ◽  
François Olivié ◽  
Isabelle Séguy ◽  
Christina Villeneuve ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Current Distribution ◽  
Morphological Study ◽  
Room Temperature ◽  
Spin Valve ◽  
Vibrating Sample Magnetometer ◽  
Force Microscopy ◽  
Dc Sputtering ◽  
Ferromagnetic Electrodes ◽  
Atomic Force

ABSTRACTThis paper describes first steps in preparation of an organic spin valve based on a perylene derivative (PTCTE) sandwiched between magnetite (Fe3O4) and cobalt (Co) ferromagnetic electrodes. MgO(001)/Fe3O4/PTCTE (450 nm)/Co devices were prepared with different Co soft deposition methods: off-axis dc-sputtering or Joule evaporation. Vibrating Sample Magnetometer (VSM) studies of the Fe3O4/PTCTE/Co stacks evidence spin valve behavior with magnetically uncoupled electrodes. These results are correlated with a morphological study by atomic force microscopy (AFM) of each layer and tunneling AFM (TUNA) for the investigation of inhomogeneity of current distribution in the devices. Finally, macroscopic I-V characteristics performed on the same devices will be presented and compared with TUNA results.

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