6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers

1998 ◽  
Vol 72 (1) ◽  
pp. 4-6 ◽  
Author(s):  
J. K. Wade ◽  
L. J. Mawst ◽  
D. Botez ◽  
R. F. Nabiev ◽  
M. Jansen ◽  
...  
Keyword(s):  
Active Region ◽  
Wave Front ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Front Facet

scholarly journals 8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers

1996 ◽  
Vol 69 (11) ◽  
pp. 1532-1534 ◽  
Author(s):  
L. J. Mawst ◽  
A. Bhattacharya ◽  
J. Lopez ◽  
D. Botez ◽  
D. Z. Garbuzov ◽  
...  
Keyword(s):  
Wave Front ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Front Facet

scholarly journals Erratum: ‘‘8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers’’ [Appl. Phys. Lett. 69, 1532 (1996)]

1996 ◽  
Vol 69 (22) ◽  
pp. 3437-3437
Author(s):  
L. J. Mawst ◽  
A. Bhattacharya ◽  
J. Lopez ◽  
D. Botez ◽  
D. Z. Garbuzov ◽  
...  
Keyword(s):  
Wave Front ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Front Facet

scholarly journals 14.3 W quasicontinuous wave front-facet power from broad-waveguide Al-free 970 nm diode lasers

1997 ◽  
Vol 71 (9) ◽  
pp. 1142-1144 ◽  
Author(s):  
A. Al-Muhanna ◽  
L. J. Mawst ◽  
D. Botez ◽  
D. Z. Garbuzov ◽  
R. U. Martinelli ◽  
...  
Keyword(s):  
Wave Front ◽  
Diode Lasers ◽  
Front Facet

5 W continuous wave power, 0.81-μm-emitting, Al-free active-region diode lasers

1997 ◽  
Vol 71 (2) ◽  
pp. 172-174 ◽  
Author(s):  
J. K. Wade ◽  
L. J. Mawst ◽  
D. Botez ◽  
R. F. Nabiev ◽  
M. Jansen
Keyword(s):  
Active Region ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Wave Power

scholarly journals High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers

1997 ◽  
Vol 70 (2) ◽  
pp. 149-151 ◽  
Author(s):  
J. K. Wade ◽  
L. J. Mawst ◽  
D. Botez ◽  
M. Jansen ◽  
F. Fang ◽  
...  
Keyword(s):  
Active Region ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Wave Power

Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers

2008 ◽  
Vol 16 (1) ◽  
Author(s):  
P. Karbownik ◽  
R. Sarzała
Keyword(s):  
Active Region ◽  
Diode Laser ◽  
Temperature Increase ◽  
Room Temperature ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Ridge Waveguide ◽  
Lasing Threshold ◽  
Etching Depth ◽  
Region Temperature

AbstractRoom-temperature (RT) continuous-wave (CW) operation of the 405-nm ridge-waveguide (RW) InGaN/GaN quantum-well diode lasers equipped with the n-type GaN substrate and two contacts on both sides of the structure has been investigated with the aid of the comprehensive self-consistent simulation model. As expected, the mounting configuration (p-side up or down) has been found to have a crucial impact on the diode laser performance. For the RT CW threshold operation of the otherwise identical diode laser, the p-side up RW laser exhibits as high as nearly 68°C maximal active-region temperature increase whereas an analogous increase for the p-side down laser was equal to only 24°C. Our simulation reveals that the lowest room-temperature lasing threshold may be expected for relatively narrow and deep ridges. For the structure under consideration, the lowest threshold current density of 5.75 kA/cm2 has been determined for the 2.2-μm ridge width and the 400-nm etching depth. Then, the active-region temperature increase was as low as only 24 K over RT. For wider 5-μm ridge, this increase is twice higher. An impact of etching depth is more essential for narrower ridges. Quite high values (between 120 and 140 K) of the characteristic parameter T0 convince very good thermal properties of the above laser.

High power continuous and quasi-continuous wave InGaAsP/InP broad-waveguide separate confinement-heterostructure multiquantum well diode lasers

1997 ◽  
Vol 33 (19) ◽  
pp. 1635 ◽  
Author(s):  
D.Z. Garbuzov ◽  
R.J. Menna ◽  
R.U. Martinelli ◽  
J.H. Abeles ◽  
J.C. Connolly
Keyword(s):  
High Power ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Multiquantum Well

scholarly journals Medical Applications of Diode Lasers: Pulsed versus Continuous Wave (cw) Regime

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 710
Author(s):  
Michał Michalik ◽  
Jacek Szymańczyk ◽  
Michał Stajnke ◽  
Tomasz Ochrymiuk ◽  
Adam Cenian
Keyword(s):  
Diode Laser ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Short Review ◽  
Medical Application ◽  
Medical Applications ◽  
Therapeutic Effects ◽  
Pulsed Mode ◽  
Medical Therapies

The paper deals with the medical application of diode-lasers. A short review of medical therapies is presented, taking into account the wavelength applied, continuous wave (cw) or pulsed regimes, and their therapeutic effects. Special attention was paid to the laryngological application of a pulsed diode laser with wavelength 810 nm, and dermatologic applications of a 975 nm laser working at cw and pulsed mode. The efficacy of the laser procedures and a comparison of the pulsed and cw regimes is presented and discussed.

scholarly journals Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power

2018 ◽  
Vol 8 (7) ◽  
pp. 1104 ◽  
Author(s):  
Thanh-Phuong Nguyen ◽  
Hans Wenzel ◽  
Olaf Brox ◽  
Frank Bugge ◽  
Peter Ressel ◽  
...  
Keyword(s):  
Output Power ◽  
Diode Lasers ◽  
Substantial Reduction ◽  
Distributed Feedback ◽  
Optical Output ◽  
Spectral Linewidth ◽  
Facet Reflectivity ◽  
Simulation Results ◽  
Front Facet

The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and experimentally. Characterization of lasers at various front facet reflections showed substantial reduction of the linewidth. This behavior is in reasonable agreement with simulation results. A minimum linewidth of 8 kHz was achieved at an output power of 85 mW with the laser featuring a front facet reflectivity of 30%. The device with a front facet reflectivity of 5% reached the same linewidth value at an output power of 290 mW.

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