Role of arsenic clusters in carrier recombination in low-temperature grown AlGaAs/GaAs multiple quantum wells

1998 ◽  
Vol 72 (12) ◽  
pp. 1463-1465 ◽  
Author(s):  
W. Feng ◽  
Y. Wang ◽  
J. Wang ◽  
W. K. Ge ◽  
Q. Huang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Recombination

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum

Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: The role of intermixing

2002 ◽  
Vol 81 (16) ◽  
pp. 2950-2952 ◽  
Author(s):  
S. Pereira ◽  
E. Pereira ◽  
E. Alves ◽  
N. P. Barradas ◽  
K. P. O’Donnell ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Depth Profiling ◽  
Rutherford Backscattering ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

A low-temperature photoluminescence study of GaAs1-xNx/GaAs multiple quantum wells

2017 ◽  
Author(s):  
M. Biswas ◽  
A. Balgarkashi ◽  
S. Singh ◽  
N. Shinde ◽  
R. L. Makkar ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Study ◽  
Low Temperature Photoluminescence
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