Generation of pulse-modulated induction thermal plasma at atmospheric pressure

1997 ◽  
Vol 71 (26) ◽  
pp. 3787-3789 ◽  
Author(s):  
Takamasa Ishigaki ◽  
Xiaobao Fan ◽  
Tadahiro Sakuta ◽  
Toshiyuki Banjo ◽  
Yukihito Shibuya
Keyword(s):  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Induction Thermal Plasma

Numerical analysis for co-condensation processes in silicide nanoparticle synthesis using induction thermal plasmas at atmospheric pressure conditions

2005 ◽  
Vol 20 (10) ◽  
pp. 2801-2811 ◽  
Author(s):  
Masaya Shigeta ◽  
Takayuki Watanabe
Keyword(s):  
Numerical Analysis ◽  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Stoichiometric Composition ◽  
Nanoparticle Synthesis ◽  
Metal Vapor ◽  
Formation Mechanisms ◽  
Induction Thermal Plasma ◽  
Electromagnetic Fluid ◽  
Experimental Findings

Numerical analysis is conducted to clarify the formation mechanisms of silicide nanoparticles synthesized in an induction thermal plasma maintained at atmospheric pressure. The induction thermal plasma is analyzed by an electromagnetic fluid dynamics approach, in addition to a multi-component co-condensation model, proposed for the silicide nanoparticle synthesis. In the Cr–Si and Co–Si systems, silicon vapor is consumed by homogeneous nucleation and heterogeneous condensation processes; subsequently, metal vapor condenses heterogeneously onto liquid silicon particles. The Mo–Si system shows the opposite tendency. In the Ti–Si system, vapors of silicon and titanium condense simultaneously on the silicon nuclei. Each system produces nanoparticle diameters of around 10 nm, and the required disilicides, with the stoichiometric composition, are obtained. Only the Ti–Si system has a narrow range of silicon content. The numerical analysis results agree with the experimental findings. Finally, the correlation chart, predicting the saturation vapor pressure ratios and the resulting silicon contents, is presented for estimation of nanoparticle compositions produced in the co-condensation processes.

scholarly journals Role of Hydrogen in High-Yield Growth of Boron Nitride Nanotubes at Atmospheric Pressure by Induction Thermal Plasma

ACS Nano ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 884-893 ◽  
Author(s):  
Keun Su Kim ◽  
Martin Couillard ◽  
Homin Shin ◽  
Mark Plunkett ◽  
Dean Ruth ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Boron Nitride Nanotubes ◽  
High Yield ◽  
Induction Thermal Plasma

Silicon inclusion effect on fullerene formation under induction thermal plasma condition

2002 ◽  
Vol 407 (1-2) ◽  
pp. 72-78 ◽  
Author(s):  
C. Wang ◽  
T. Imahori ◽  
Y. Tanaka ◽  
T. Sakuta ◽  
H. Takikawa ◽  
...  
Keyword(s):  
Thermal Plasma ◽  
Plasma Condition ◽  
Induction Thermal Plasma ◽  
Fullerene Formation

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric pressure micro-thermal-plasma-jet irradiation

2021 ◽  
Author(s):  
Takuma Sato ◽  
Hiroaki Hanafusa ◽  
Seiichiro HIGASHI
Keyword(s):  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Hole Concentration ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Scanning Speed ◽  
Electrical Characteristics ◽  
Thermal Plasma Jet ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Crystalline-germanium (c-Ge) is an attractive material for a thin-film transistor (TFT) channel because of its high carrier mobility and applicability to a low-temperature process. We present the electrical characteristics of c-Ge crystallized by atmospheric pressure micro-thermal-plasma-jet (µ-TPJ). The µ-TPJ crystalized c-Ge showed the maximum Hall mobility of 1070 cm2·V−1·s−1 with its hole concentration of ~ 1016 cm−3, enabling us to fabricate the TFT with field-effect mobility (μ FE) of 196 cm2·V−1·s−1 and ON/OFF ratio (R ON/OFF) of 1.4 × 104. On the other hand, RON/OFFs and μFEs were dependent on the scanning speed of the TPJ, inferring different types of defects were induced in the channel regions. These findings show not only a possibility of the TPJ irradiation as a promising method to make a c-Ge TFT on insulating substrates.

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