Noncontact nanosecond-time-resolution temperature measurement in excimer laser heating of Ni–P disk substrates

1997 ◽  
Vol 71 (22) ◽  
pp. 3191-3193 ◽  
Author(s):  
Shaochen Chen ◽  
Costas P. Grigoropoulos
2006 ◽  
Vol 505-507 ◽  
pp. 337-342 ◽  
Author(s):  
Chil Chyuan Kuo ◽  
W.C. Yeh ◽  
C.B. Chen ◽  
J.Y. Jeng

XeF excimer laser-induced melting and recrystallization of amorphous silicon was studied using in-situ online time-resolved reflection and transmission measurements with a nanosecond time resolution. The explosive crystallization was observed for 50nm thick amorphous silicon on SiO2 deposited on non-alkali glass substrate upon 25ns pulse duration of excimer laser. Three distinct regrowth regimes were found using various excimer laser fluences. Scanning electron microscopy, Raman spectroscopy and atomic force microscopy were used to evaluate the excimer laser- irradiated region of the sample. Grain size, surface roughness and melt duration as a function of different laser fluences are also determined.


2020 ◽  
Vol 63 (1) ◽  
pp. 81-86
Author(s):  
S. G. Davydov ◽  
A. N. Dolgov ◽  
M. A. Karpov ◽  
A. V. Korneev ◽  
D. V. Nikishin ◽  
...  

2010 ◽  
Vol 53 (4) ◽  
pp. 568-574 ◽  
Author(s):  
V. A. Galievsky ◽  
A. S. Stasheuski ◽  
V. V. Kiselyov ◽  
A. I. Shabusov ◽  
M. V. Belkov ◽  
...  

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