Transport properties and colossal magnetoresistance in epitaxial La0.67Cd0.33MnO3 thin film

1997 ◽  
Vol 71 (18) ◽  
pp. 2701-2703 ◽  
Author(s):  
M. Sahana ◽  
M. S. Hegde ◽  
N. Y. Vasanthacharya ◽  
V. Prasad ◽  
S. V. Subramanyam
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Colossal Magnetoresistance

Correlating Charge Transport Properties of Conjugated Polymers in Solution Aggregates and Thin‐Film Aggregates

2021 ◽  
Author(s):  
Jian Pei ◽  
Zi-Yuan Wang ◽  
Lucia Di Virgilio ◽  
Ze-Fan Yao ◽  
Zi-Di Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Conjugated Polymers ◽  
Charge Transport ◽  
Transport Properties

Transport properties of n-type Cux-TiyCz thin film semiconductor at different Cu/TiC ratios

2020 ◽  
Author(s):  
Avishek Roy ◽  
Arun Kumar Mukhopadhyay ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar
Keyword(s):  
Thin Film ◽  
Transport Properties

Study of structural and electrical transport properties of CaRuO3 bulk and thin film

2020 ◽  
Author(s):  
Roshan Kumar Patel ◽  
Shobha Gondh ◽  
Harish Kumar ◽  
Shuchi Shyam Chitrakar ◽  
A. K. Pramanik
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties

scholarly journals Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Structural Defects ◽  
Film Composition ◽  
High Substrate ◽  
Foil Substrate

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

Electrical transport properties in nitrogen-doped p-type ZnO thin film

2006 ◽  
Vol 21 (12) ◽  
pp. 1522-1526 ◽  
Author(s):  
Z Y Xiao ◽  
Y C Liu ◽  
B H Li ◽  
J Y Zhang ◽  
D X Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Electrical Transport ◽  
Zno Thin Film ◽  
Electrical Transport Properties ◽  
Nitrogen Doped ◽  
P Type

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

Probing disorder and transport properties in polypyrrole thin-film devices by impedance and Raman spectroscopy

2013 ◽  
Vol 46 (36) ◽  
pp. 365306 ◽  
Author(s):  
Vaibhav Varade ◽  
Gajanan V Honnavar ◽  
P Anjaneyulu ◽  
K P Ramesh ◽  
Reghu Menon
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Transport Properties ◽  
Thin Film Devices
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