Preparation of regular arrays of antidots in YBa2Cu3O7 thin films and observation of vortex lattice matching effects

1997 ◽  
Vol 71 (7) ◽  
pp. 962-964 ◽  
Author(s):  
A. Castellanos ◽  
R. Wördenweber ◽  
G. Ockenfuss ◽  
A. v.d. Hart ◽  
K. Keck
Keyword(s):  
Thin Films ◽  
Vortex Lattice ◽  
Lattice Matching ◽  
Regular Arrays

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Microstructure and Properties of (Tb,Sm)CoSi/Cr Series Thin Films for Permanent Magnets

2007 ◽  
Vol 121-123 ◽  
pp. 267-270 ◽  
Author(s):  
X. Wang ◽  
Z.Y. Li ◽  
X. Yu ◽  
S. Su ◽  
J. Li
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Permanent Magnets ◽  
Magnetic Layer ◽  
Lattice Matching ◽  
Microstructure And Properties ◽  
N2 Atmosphere ◽  
Magnetic Layers

The microstructures and properties of (Tb,Sm)CoSi/Cr series films have been investigated. All the samples were sputtered and annealed at 500 °C for 25 min in pure N2 atmosphere, and their microstructures and properties were examined. The effect on the magnetic properties of partial Sm substituted by Tb is discussed. The lattice matching media were examined. And the mechanisms of interactions among the grains and between the magnetic layers have been analyzed by comparing multi magnetic layer with the mono magnetic layer.

Phase transition from solid to liquid phase of vortex lattice in YBa2Cu3O7 thin films

1990 ◽  
Vol 170 (5-6) ◽  
pp. 513-520 ◽  
Author(s):  
Yuuji Horie ◽  
Shun-ichi Kuroumaru ◽  
Bai-ru Zhao ◽  
Xiang-gang Qiu ◽  
Yin-zi Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Liquid Phase ◽  
Vortex Lattice

MICROSTRUCTURES OF SPUTTERED ORIENTED Si/CeO2 BILAYERs YBa2Cu3O7-δ/Si INTEGRATED MICROELECTRONICS

2003 ◽  
Vol 17 (04n06) ◽  
pp. 848-854 ◽  
Author(s):  
A. CHIODONI ◽  
E. MEZZETTI ◽  
D. BOTTA ◽  
L. GOZZELINO ◽  
B. MINETTI ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cerium Dioxide ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Integrated Electronics ◽  
Lattice Matching ◽  
Deposition Techniques

In the framework of a research aimed to superconductor/semiconductor integrated electronics, we have grown a-axis oriented YBa 2 Cu 3 O 7-δ (YBCO) thin films on silicon (100) substrates with (111) oriented insulating buffer layers of cerium dioxide ( CeO 2), using magnetron sputtering deposition techniques. The properties of the cerium dioxide layer have been preliminary optimized by means of several layout and by monitoring the growing procedures through X-ray diffraction, AFM and TEM techniques. The lattice matching between CeO 2 and YBCO resulted to be worsened by an amorphous thin SiO 2 layer at the Si/CeO 2 interface, that decouples the buffer orientation from the seed orientation. However, it was possible to grow a relatively thick, optimally textured layer of CeO 2 without spurious orientations. The YBCO films deposited on top of this layer result preferentially a-axis oriented. The transition widths are very large, jet well controllable and reproducible. Some technological applications can be already envisaged.

Morphology of Epitaxially Grown BaRuO3 and CaRuO3 Thin Films by Laser Ablation

2007 ◽  
Vol 352 ◽  
pp. 315-318 ◽  
Author(s):  
Akihiko Ito ◽  
Hiroshi Masumoto ◽  
Takashi Goto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Laser Ablation ◽  
Flat Surface ◽  
High Electrical Conductivity ◽  
Island Growth ◽  
Lattice Matching ◽  
Metallic Conduction ◽  
Good Lattice

Epitaxial BaRuO3 (BRO) and CaRuO3 (CRO) thin films were prepared on (001), (110) and (111) SrTiO3 (STO) single-crystal substrates by laser ablation, and their microstructures and anisotropy of electrical conductivity were investigated. The (205) (104), (110) and (009) oriented BRO thin films, and (001), (110) and (110) oriented CRO thin films were grown epitaxially on (001), (110) and (111) STO substrates with in-plain orientation, respectively. The (009) BRO thin film and (001) CRO thin film has a flat surface result from a good lattice matching to STO substrates. The (205) (104) BRO thin film and (111) CRO thin film exhibited orthogonal- and hexagonal-shaped texture, respectively. The (110) BRO thin film and (110) CRO thin film showed an island growth due to (110) surface feature of cubic perovskite structure. Epitaxial BRO and CRO thin films have a high electrical conductivity with a metallic conduction, the (111) CRO thin films exhibited the highest conductivity of 1.4×105 S·m-1.

Atomistic Configurations of Diamond/Silicon Interface

1993 ◽  
Vol 317 ◽  
Author(s):  
A. S. Nandedkar ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Diamond Films ◽  
Stacking Faults ◽  
Interatomic Potentials ◽  
Lattice Matching ◽  
Geometric Configurations ◽  
Silicon Interface ◽  
Least Energy ◽  
Poor Adhesion

ABSTRACTThe quality of diamond thin films on nondiamond substrates is often poor because of large number of defects such as dislocations, twins, stacking faults and grain boundaries. The diamond films often exhibit poor adhesion on nondiamond substrates because of large differences in interatomic potentials between the film and the substrate. The epitaxial nature of the film is determined not only by lattice matching but also by gradient in interatomic potentials across the interface. We have used computer simulations to study energetics of different geometric configurations of C / Si interfaces. The simulations predict that an C / SiC interface had the least energy and therefore the preferred interface configuration. This is in concordance with experimental deposition of C on Si which resulted in formation of an SiC layer in between C and Si.

In-plane vortex lattice rearrangements in superconducting thin films

1994 ◽  
Vol 235-240 ◽  
pp. 2589-2590 ◽  
Author(s):  
S.H. Brongersma ◽  
D.G. de Groot ◽  
R. Griessen
Keyword(s):  
Thin Films ◽  
Vortex Lattice ◽  
Superconducting Thin Films
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