AlGaAs/GaAs high electron mobility transistor with a low-temperature grown GaAs ion damage blocking layer

1997 ◽  
Vol 71 (4) ◽  
pp. 494-496 ◽  
Author(s):  
Ching-Hui Chen ◽  
James P. Ibbetson ◽  
Evelyn L. Hu ◽  
Umesh K. Mishra
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Blocking Layer ◽  
High Electron Mobility ◽  
Ion Damage ◽  
Low Temperature Grown Gaas

An ultra-low noise pseudomorphic high electron mobility transistor (pHEMT)-based low noise amplifier using low temperature co-fire ceramic (LTCC) technique

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Bhuvaneshwari Subburaman ◽  
Kanthamani Sundharajan
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
High Electron ◽  
High Electron Mobility ◽  
Content Type ◽  
Noise Amplifier

Purpose This study aims to present two stage pseudomorphic high electron mobility transistor-based low noise amplifier (LNA) designed using low temperature co-fire ceramic (LTCC) technique for ultra-high frequency (UHF) band. The LNA operates in the frequency range of (400∼500) MHz which is suitable for wireless communication applications. Design/methodology/approach This LNA uses resistive capacitive (RC) feedback in the first stage to have wide bandwidth and interstage network for gain enhancement. By using external RC feedback, stability is improved and noise matching in the input stage is isolated by decoupling inductor. The excellent performance parameters including gain, noise figure (NF), wideband and linearity are attained without affecting the power consumption, compactness and cost of the proposed design. Findings Simulation is carried out using advanced design software and the result shows that gain of 33.7 dB, NF 0.416 dB and 1 dB compression point (P1dB) of 18.59 dBm are achieved with a supply voltage of 2.5 V. The return loss of input and output are −19.3 dB and −10.5 dB, respectively. From the above aforementioned parameters, it is confirmed that the proposed LNA is a promising candidate for receivers where high gain and very low NF are always demandable with good linearity for applications operating in the UHF band. Originality/value The innovation of the proposed LNA is that the concurrent attainment of high gain, low NF, wideband, optimum input matching, good stability by RC feedback and interstage network using LTCC technique to achieve robustness, low cost and compactness to prove the applicability of design for wireless applications.

Sign in / Sign up

Export Citation Format

Share Document