Effects of rapid thermal annealing on GaInP/AlGaInP lasers grown by all-solid-source molecular beam epitaxy

1997 ◽  
Vol 71 (4) ◽  
pp. 479-481 ◽  
Author(s):  
Marko Jalonen ◽  
Mika Toivonen ◽  
Pekka Savolainen ◽  
Jukka Köngäs ◽  
Markus Pessa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
B.J. Skromme ◽  
N.G. Stoffel ◽  
A.S. Gozdz ◽  
M.C. Tamargo ◽  
S.M. Shibli
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Vacancy Formation ◽  
Annealing Temperatures ◽  
The Creation ◽  
Zn Vacancy

ABSTRACTWe describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

Characteristic of rapid thermal annealing on GaIn(N)(Sb)As∕GaAs quantum well grown by molecular-beam epitaxy

2006 ◽  
Vol 99 (3) ◽  
pp. 034903 ◽  
Author(s):  
H. Zhao ◽  
Y. Q. Xu ◽  
H. Q. Ni ◽  
S. Y. Zhang ◽  
D. H. Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam

Effect of rapid thermal annealing: red and blue shift in photoluminescence of GaNAs grown by RF plasma-assisted molecular beam epitaxy

2001 ◽  
Vol 692 ◽  
Author(s):  
W. K. Loke ◽  
S. F. Yoon ◽  
T. K. Ng ◽  
S. Z. Wang ◽  
W. J. Fan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Performance ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Growth Surface ◽  
Significant Implication ◽  
Reciprocal Space Mapping ◽  
Direction Parallel

AbstractRapid thermal annealing (RTA) of 1000Å GaNAs films grown on (100) oriented GaAs substrate by radio frequency (RF) plasma assisted solid-source molecular beam epitaxy was studied by low-temperature photoluminescence (PL) and high-resolution x-ray diffraction (HRXRD). Samples with nitrogen content of 13 and 2.2% have shown an overall blueshift in energy of 67.7meV and an intermediate redshift of 42.2meV in the PL spectra when subjected to RTA at 525–850°C for 10min. It is also shown that the sample, which is annealed at temperature range of 700–750°C, has the highest photoluminescence efficiency (1.7–2.1 times increase in integrated PL intensity as compared to the as-grown sample). Reciprocal space mapping of the as-grown GaNAs samples obtained by using triple-crystal HRXRD shows the presence of interstitially incorporated of N atoms with no lattice relaxation in the direction parallel to the growth surface. These results have significant implication on the growth and post-growth treatment of nitride compound semiconductor materials for high performance optoelectronics devices.

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