Numerical analysis of excimer-laser-induced melting and solidification of thin Si films

1997 ◽  
Vol 71 (1) ◽  
pp. 99-101 ◽  
Author(s):  
Vikas V. Gupta ◽  
H. Jin Song ◽  
James S. Im
Keyword(s):  
Numerical Analysis ◽  
Excimer Laser ◽  
Si Films ◽  
Melting And Solidification

Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiroshi Iwata ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Keiichi Sano ◽  
...  
Keyword(s):  
Grain Size ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solidification Velocity ◽  
Excimer Laser Annealing ◽  
Arf Excimer Laser ◽  
Si Films

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

Surface hardening of SUS304 by irradiation with a KrF excimer laser in SiH4 gas ambient

1990 ◽  
Vol 5 (2) ◽  
pp. 265-270 ◽  
Author(s):  
Koji Sugioka ◽  
Hideo Tashiro ◽  
Koichi Toyoda ◽  
Eiichi Tamura ◽  
Keigo Nagasaka
Keyword(s):  
Excimer Laser ◽  
Surface Hardening ◽  
Continuous Distribution ◽  
Surface Hardness ◽  
Laser Pulses ◽  
High Concentration ◽  
Laser Fluences ◽  
High Adhesion ◽  
Krf Excimer Laser ◽  
Si Films

Surface hardening of SUS304 resulting from the process of doping and deposition of Si by irradiation of a KrF excimer laser beam in a SiH4 gas ambient is investigated, and variations of the surface hardness are examined for different numbers of laser pulses and the laser fluences. The hardening is due to Si incorporation in high concentration. The continuous distribution of Si atoms across the surface layer suggests that a very high adhesion strength of the deposited Si films can be formed. The specific process for surface modification is referred to as laser implant-deposition (LID).

Multiple Pulse Irradiation Effects in Excimer Laser-Induced Crystallization of Amorphous Si Films

1993 ◽  
Vol 321 ◽  
Author(s):  
H. J. Kim ◽  
James S. Im
Keyword(s):  
Excimer Laser ◽  
Single Pulse ◽  
Pulse Irradiation ◽  
Multiple Pulse ◽  
Melting Phenomenon ◽  
Irradiation Energy ◽  
Crystallization Experiments ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

ABSTRACTWe have experimentally Investigated the effects that are associated with Multiple-pulse irradiation in the excimer laser processing of thin Si films on SiO2. Double-pulse irradiation experiments revealed results, which are consistent with that which is known from single-pulse crystallization experiments, and these experiments confirm the applicability of the transformation scenarios, which were derived from single pulse-induced crystallization experiments [1,2]. The results from the Multiple-pulse irradiation experiments clearly show that gradual and substantial grain enlargement can occur — and only occurs — when the irradiation energy density is close to but less than the level that is required to melt the film completely. Based on these findings, we argue that the grain enlargement effect is a near-complete melting phenomenon that is associated with polycrystalline Si films, and we present a grain boundary melting model to account for this phenomenon. A brief discussion on the apparent similarities and physical differences between the observed phenomenon and the solid state grain growth processes is provided herein.

Analysis of Si-SiO2 Interfacial-Energy Hierarchy via Mixed-Phase Solidification of Si Films on SiO2

2015 ◽  
Vol 1770 ◽  
pp. 55-60
Author(s):  
Ying Wang ◽  
Monica D. Chahal ◽  
J. J. Wang ◽  
A. B. Limanov ◽  
A. M. Chitu ◽  
...  
Keyword(s):  
Partial Melting ◽  
Microstructure Evolution ◽  
Interfacial Energy ◽  
Thermodynamic Model ◽  
Orientation Distribution ◽  
Mixed Phase ◽  
Hierarchical Order ◽  
Interfacial Energies ◽  
Si Films ◽  
Melting And Solidification

ABSTRACTWe have experimentally investigated the anisotropy of Si-SiO2 interfacial energy by leveraging the mixed-phase solidification (MPS) method. By examining the microstructure evolution resulting from partial-melting-and-solidification cycles, and interpreting the changes in the surface-orientation distribution of the grains in terms of the thermodynamic model, we have identified the orientation-dependent hierarchical order of Si-SiO2 interfacial energies, σ{hkl}, as: σ{100} < σ{310} < σ{113} < σ{112} < σ{221} < σ{210}∼σ{331} < σ{111}, σ{110}.

Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates

MRS Bulletin ◽  
2006 ◽  
Vol 31 (6) ◽  
pp. 461-465 ◽  
Author(s):  
P.C. van der Wilt ◽  
M.G. Kane ◽  
A.B. Limanov ◽  
A.H. Firester ◽  
L. Goodman ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Defect Density ◽  
Solid Phase ◽  
Flexible Substrates ◽  
Full Potential ◽  
Laser Crystallization ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
Si Films

AbstractLow-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities. Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date.

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