scholarly journals Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots

1997 ◽  
Vol 71 (15) ◽  
pp. 2079-2081 ◽  
Author(s):  
J. Phillips ◽  
K. Kamath ◽  
X. Zhou ◽  
N. Chervela ◽  
P. Bhattacharya
Keyword(s):  
Quantum Dots ◽  
Infrared Absorption ◽  
Far Infrared ◽  
Inas Quantum Dots ◽  
Self Organized ◽  
Si Doped

scholarly journals Far-infrared photoconductivity in self-organized InAs quantum dots

1998 ◽  
Vol 72 (16) ◽  
pp. 2020-2022 ◽  
Author(s):  
J. Phillips ◽  
K. Kamath ◽  
P. Bhattacharya
Keyword(s):  
Quantum Dots ◽  
Far Infrared ◽  
Inas Quantum Dots ◽  
Self Organized

Uniform formation process of self-organized InAs quantum dots

2002 ◽  
Vol 237-239 ◽  
pp. 1301-1306 ◽  
Author(s):  
Koichi Yamaguchi ◽  
Toshiyuki Kaizu ◽  
Kunihiko Yujobo ◽  
Yoshikuni Saito
Keyword(s):  
Quantum Dots ◽  
Formation Process ◽  
Inas Quantum Dots ◽  
Self Organized

Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm.

2003 ◽  
Vol 794 ◽  
Author(s):  
V. Celibert ◽  
B. Salem ◽  
G. Guillot ◽  
C. Bru-Chevallier ◽  
L. Grenouillet ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excitation Power ◽  
Good Growth ◽  
Excitation Power Density ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Self Organized ◽  
Gas Source ◽  
Atomic Force ◽  
Layer Deposition

ABSTRACTSelf-organized InAs quantum dots (QDs) were grown in the Stranski-Krastanov regime, by gas-source molecular beam epitaxy (GSMBE), on (100) GaAs substrates. Two important parameters have been optimized in order to grow high quality QDs with a very good reproducibility: InAs growth rate and GaAs cap layer deposition rate. Atomic force microscopy (AFM) analysis shows a unimodal QD distribution and the room temperature photoluminescence (RTPL) spectrum of the optimized sample reveals a 1.3 μm emission with a 19 meV full width at half maximum (FWHM). Photoluminescence (PL) measurements versus excitation power density and photoluminescence excitation (PLE) measurements clearly show multi-component PL emission from transitions associated with fundamental and related excited states of QDs. Furthermore a good growth reproducibility is observed. The results are promising for further work which will lead to laser fabrication.

Improvement of self-organized InAs quantum dots growth by molecular beam epitaxy

2005 ◽  
Vol 276 (1-2) ◽  
pp. 72-76 ◽  
Author(s):  
Z.L. Miao ◽  
S.J. Chua ◽  
Y.H. Chye ◽  
P. Chen ◽  
S. Tripathy
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized

Uniformity enhancement of the self-organized InAs quantum dots

1999 ◽  
Vol 197 (1-2) ◽  
pp. 372-375 ◽  
Author(s):  
Haijun Zhu ◽  
Zhiming Wang ◽  
Hui Wang ◽  
Liqiu Cui ◽  
Songlin Feng
Keyword(s):  
Quantum Dots ◽  
The Self ◽  
Inas Quantum Dots ◽  
Self Organized

Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers

1999 ◽  
Vol 28 (5) ◽  
pp. 503-505 ◽  
Author(s):  
Q. D. Zhuang ◽  
J. M. Li ◽  
Y. P. Zeng ◽  
L. Pan ◽  
Y. H. Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Absorption ◽  
Absorption Properties ◽  
Self Organized
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