InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal–organic chemical-vapor deposition
1997 ◽
Vol 170
(1-4)
◽
pp. 590-594
◽
1981 ◽
1991 ◽
Vol 34
(6)
◽
pp. 649-653
◽
2013 ◽
Vol 31
(5)
◽
pp. 051211
◽
2008 ◽
Vol 26
(3)
◽
pp. 1157
◽
1999 ◽
Vol 09
(PR8)
◽
pp. Pr8-613-Pr8-620
◽