InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal–organic chemical-vapor deposition

1997 ◽  
Vol 70 (1) ◽  
pp. 40-42 ◽  
Author(s):  
J. Diaz ◽  
H. Yi ◽  
A. Rybaltowski ◽  
B. Lane ◽  
G. Lukas ◽  
...  
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