The impact of using AlGaAs as a carrier supplying layer in an InAlAs/InGaAs high electron mobility transistor structure on thermal stability

1997 ◽  
Vol 70 (25) ◽  
pp. 3386-3388 ◽  
Author(s):  
Mitsuru Tanabe ◽  
Noboru Kashiwagi ◽  
Toshinobu Matsuno ◽  
Akiyoshi Tamura
Keyword(s):  
Thermal Stability ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
High Electron Mobility ◽  
The Impact

The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor

2019 ◽  
Vol 33 (18) ◽  
pp. 1950190
Author(s):  
Hai Li Wang ◽  
Peng Yang ◽  
Kun Xu ◽  
Xiang Yang Duan ◽  
Shu Xiang Sun
Keyword(s):  
Mole Fraction ◽  
Electron Mobility ◽  
Transport Model ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Conduction Band Offset ◽  
Electron Mobility Transistors ◽  
The Impact

In this paper, we investigated the impact of thickness and mole fraction AlInGaN back barrier on the DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) by numerical simulation. The simulations are performed using the hydrodynamic transport model (HD). The simulation results indicated that an inserted AlInGaN back barrier with increasing thickness and mole fraction could effectively confine the electron in the channel, resulting in a significant improvement of the channel current and transconductance. Additionally, the variation of conduction band offset and the increase of total number electron in the channel led to the threshold voltage moving toward a more negative value.

scholarly journals Ultrawide electrical tuning of light matter interaction in a high electron mobility transistor structure

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Shovon Pal ◽  
Hanond Nong ◽  
Sergej Markmann ◽  
Nadezhda Kukharchyk ◽  
Sascha R. Valentin ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
High Electron Mobility ◽  
Matter Interaction ◽  
Light Matter Interaction

Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCD26 ◽  
Author(s):  
Mikhail Rudinsky ◽  
Eugene Yakovlev ◽  
Roman Talalaev ◽  
Tomas Novak ◽  
Petr Kostelnik ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
High Electron Mobility ◽  
Mocvd Growth

Properties of Al y Ga 1– y N/Al x Ga 1– x N/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure

2009 ◽  
Vol 26 (1) ◽  
pp. 017301 ◽  
Author(s):  
Guo Lun-Chun ◽  
Wang Xiao-Liang ◽  
Xiao Hong-Ling ◽  
Ran Jun-Xue ◽  
Wang Cui-Mei ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
Double Barrier ◽  
High Electron Mobility

A Charge Storage Based Enhancement Mode AlGaN/GaN High Electron Mobility Transistor

2018 ◽  
Vol 913 ◽  
pp. 870-875 ◽  
Author(s):  
Hui Wang ◽  
Ling Li Jiang ◽  
Ning Wang ◽  
Hong Yu Yu ◽  
Xin Peng Lin
Keyword(s):  
Electron Mobility ◽  
Gate Dielectric ◽  
High Electron Mobility Transistor ◽  
Charge Storage ◽  
High Electron ◽  
High Electron Mobility ◽  
Charge Trap ◽  
Enhancement Mode ◽  
A Charge ◽  
The Impact

In this work, a charge storage based enhancement mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) is proposed and studied. A stacked gate dielectrics, consisting of a tunnel oxide, a charge trap layer and a blocking oxide are applied in the HEMT structure. The E-mode can be realized by negative charge storage within the charge trap layer during the programming process. The impact of the programming condition and the thickness of the dielectrics on the threshold voltage (Vth) are simulated systematically. It is found that the Vth increases with the increasing programming voltage and time due to the increase of the storage charge. Under proper programming condition, the Vth can be increased to more than 2 V. Moreover, It is also found that the Vth increases with the decrease of the thickness of the dielectrics. In addition, it is found that the breakdown voltage of such HEMT can be adjusted by varying the gate dielectric stacks.

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