Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures

G. Yusa; H. Sakaki

doi:10.1063/1.119068

Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures

Applied Physics Letters ◽

10.1063/1.119068 ◽

1997 ◽

Vol 70 (3) ◽

pp. 345-347 ◽

Cited By ~ 188

Author(s):

G. Yusa ◽

H. Sakaki

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Persistent Photoconductivity ◽

Inas Quantum Dots ◽

Effect Transistor

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Characteristics of a field-effect transistor with stacked InAs quantum dots

Applied Physics Letters ◽

10.1063/1.1572468 ◽

2003 ◽

Vol 82 (18) ◽

pp. 3092-3094 ◽

Cited By ~ 6

Author(s):

T. H. Wang ◽

H. W. Li ◽

J. M. Zhou

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Inas Quantum Dots ◽

Effect Transistor

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Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.104002 ◽

2010 ◽

Vol 49 (10) ◽

pp. 104002 ◽

Cited By ~ 2

Author(s):

Yueqiang Li ◽

Xiaodong Wang ◽

Xiaona Xu ◽

Wen Liu ◽

Yanling Chen ◽

...

Keyword(s):

Quantum Dots ◽

Negative Differential Resistance ◽

Field Effect ◽

Field Effect Transistor ◽

Differential Resistance ◽

Inas Quantum Dots ◽

Effect Transistor

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Control of Current Hysteresis Effects in a GaAs/n-AlGaAs Quantum Trap Field Effect Transistor with Embedded InAs Quantum Dots

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.7100 ◽

2000 ◽

Vol 39 (Part 1, No. 12B) ◽

pp. 7100-7102 ◽

Cited By ~ 7

Author(s):

Hoon Kim ◽

Takeshi Noda ◽

Takuya Kawazu ◽

Hiroyuki Sakaki

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Inas Quantum Dots ◽

Trap Field ◽

Effect Transistor

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Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2011.11.009 ◽

2011 ◽

Vol 44 (3) ◽

pp. 686-689 ◽

Cited By ~ 2

Author(s):

Y.Q. Li ◽

X.D. Wang ◽

X.N. Xu ◽

W. Liu ◽

F.H. Yang ◽

...

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Current Oscillation ◽

Induced Current ◽

Inas Quantum Dots ◽

Effect Transistor ◽

Optically Induced

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State Tomography of Layered Qubits via Spin Blockade Measurements on the Edge Qubit in a Spin Field-Effect Transistor Structure Embedded with Quantum Dots

10.1063/1.2730285 ◽

2007 ◽

Author(s):

K. Yuasa ◽

K. Okano ◽

H. Nakazato ◽

S. Kashiwada ◽

K. Yoh

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

Spin Field ◽

State Tomography ◽

Effect Transistor ◽

Spin Blockade

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Modeling of the Heterostructure Field-Effect Transistor with Quantum Dots

2006 16th International Crimean Microwave and Telecommunication Technology ◽

10.1109/crmico.2006.256370 ◽

2006 ◽

Author(s):

V. Timofeyev ◽

E. Faleyeva

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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High-performance Quantum Dots decorated graphene/ZnO-nanowire field-emission type field-effect transistor

2015 28th International Vacuum Nanoelectronics Conference (IVNC) ◽

10.1109/ivnc.2015.7225559 ◽

2015 ◽

Author(s):

Zhi Tao ◽

Yuxuan Chen

Keyword(s):

Quantum Dots ◽

Field Emission ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Zno Nanowire ◽

Effect Transistor

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Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Nano Letters ◽

10.1021/nl500299h ◽

2014 ◽

Vol 14 (4) ◽

pp. 2094-2098 ◽

Cited By ~ 48

Author(s):

Benoit Voisin ◽

Viet-Hung Nguyen ◽

Julien Renard ◽

Xavier Jehl ◽

Sylvain Barraud ◽

...

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Edge State ◽

Effect Transistor

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Quantum Gates by Coupled Quantum Dots and Measurement Procedure in Field-effect-transistor Structure

Fortschritte der Physik ◽

10.1002/1521-3978(200009)48:9/11<1005::aid-prop1005>3.0.co;2-b ◽

2000 ◽

Vol 48 (9-11) ◽

pp. 1005-1021 ◽

Cited By ~ 5

Author(s):

Tetsufumi Tanamoto

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Measurement Procedure ◽

Quantum Gates ◽

Transistor Structure ◽

Coupled Quantum Dots ◽

Effect Transistor

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Quantum Gates by Coupled Quantum Dots and Measurement Procedure in Field-Effect-Transistor Structure

Scalable Quantum Computers ◽

10.1002/3527603182.ch16 ◽

2005 ◽

pp. 235-251

Author(s):

Tetsufumi Tanamoto

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Measurement Procedure ◽

Quantum Gates ◽

Transistor Structure ◽

Coupled Quantum Dots ◽

Effect Transistor

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