Low threshold InGaAlAs monolithic vertical cavity bistable device at 1.5 μm wavelength

J. P. Debray; E. Lugagne-Delpon; G. Le Roux; J. L. Oudar; M. Quillec

doi:10.1063/1.119024

Low threshold InGaAlAs monolithic vertical cavity bistable device at 1.5 μm wavelength

Applied Physics Letters ◽

10.1063/1.119024 ◽

1997 ◽

Vol 70 (21) ◽

pp. 2858-2860 ◽

Cited By ~ 8

Author(s):

J. P. Debray ◽

E. Lugagne-Delpon ◽

G. Le Roux ◽

J. L. Oudar ◽

M. Quillec

Keyword(s):

Low Threshold ◽

Bistable Device ◽

Vertical Cavity

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Low-threshold multiple-wavelength vertical-cavity laser arrays obtained by postgrowth wet oxidation

Electronics Letters ◽

10.1049/el:19981193 ◽

1998 ◽

Vol 34 (19) ◽

pp. 1857 ◽

Cited By ~ 6

Author(s):

A. Fiore ◽

Y.A. Akulova ◽

J. Ko ◽

E.R. Hegblom ◽

L.A. Coldren

Keyword(s):

Wet Oxidation ◽

Laser Arrays ◽

Multiple Wavelength ◽

Low Threshold ◽

Cavity Laser ◽

Vertical Cavity

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Planar laterally oxidized vertical-cavity lasers for low-threshold high-density top-surface-emitting arrays

IEEE Photonics Technology Letters ◽

10.1109/68.605499 ◽

1997 ◽

Vol 9 (8) ◽

pp. 1060-1062 ◽

Cited By ~ 18

Author(s):

C.L. Chua ◽

R.L. Thornton ◽

D.W. Treat

Keyword(s):

High Density ◽

Vertical Cavity Lasers ◽

Low Threshold ◽

Vertical Cavity ◽

Cavity Lasers

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Low-threshold continuous-wave operation of an oxide-confined vertical-cavity surface-emitting laser based on a quantum dot active region and half-wave cavity

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C ◽

10.1109/leosst.1997.619092 ◽

2002 ◽

Author(s):

D.L. Huffaker ◽

L.A. Graham ◽

M.R. McDaniel ◽

D.G. Deppe

Keyword(s):

Active Region ◽

Quantum Dot ◽

Continuous Wave ◽

Cavity Surface ◽

Half Wave ◽

Continuous Wave Operation ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Low Threshold ◽

Vertical Cavity

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Optimization of 1.3 µm GaAs-based oxide-confined (GaIn)(NAs) vertical-cavity surface-emitting lasers for low-threshold room-temperature operation

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/16/31/009 ◽

2004 ◽

Vol 16 (31) ◽

pp. S3121-S3140 ◽

Cited By ~ 43

Author(s):

Robert P Sarza a ◽

W odzimierz Nakwaski

Keyword(s):

Room Temperature ◽

Cavity Surface ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Low Threshold ◽

Emitting Lasers ◽

Vertical Cavity ◽

Room Temperature Operation

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Low threshold current GaAs/InGaAs vertical-cavity surface-emitting laser grown at a constant temperature by molecular beam epitaxy

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616475 ◽

2002 ◽

Author(s):

C.Y. Li ◽

D.H. Zhang ◽

S.F. Yoon

Keyword(s):

Molecular Beam Epitaxy ◽

Constant Temperature ◽

Molecular Beam ◽

Threshold Current ◽

Cavity Surface ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Low Threshold ◽

Vertical Cavity

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Wide operating wavelength range and low threshold current In/sub 0.24/Ga/sub 0.76/As/GaAs vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters ◽

10.1109/68.166938 ◽

1992 ◽

Vol 4 (11) ◽

pp. 1192-1194 ◽

Cited By ~ 11

Author(s):

T.E. Sale ◽

J. Woodhead ◽

R. Grey ◽

P.N. Robson

Keyword(s):

Wavelength Range ◽

Threshold Current ◽

Cavity Surface ◽

Operating Wavelength ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Low Threshold ◽

Emitting Lasers ◽

Vertical Cavity ◽

Wide Operating

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Low threshold, wafer fused long wavelength vertical cavity lasers

Applied Physics Letters ◽

10.1063/1.111913 ◽

1994 ◽

Vol 64 (12) ◽

pp. 1463-1465 ◽

Cited By ~ 95

Author(s):

J. J. Dudley ◽

D. I. Babić ◽

R. Mirin ◽

L. Yang ◽

B. I. Miller ◽

...

Keyword(s):

Long Wavelength ◽

Vertical Cavity Lasers ◽

Low Threshold ◽

Vertical Cavity ◽

Cavity Lasers

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Dielectric apertures for mode control in low threshold and single mode vertical-cavity surface-emitting lasers

Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243) ◽

10.1109/leos.1998.739518 ◽

2002 ◽

Author(s):

D.G. Deppe ◽

D.L. Huffaker ◽

T.-H. Oh ◽

Z.Z. Zhou

Keyword(s):

Single Mode ◽

Cavity Surface ◽

Mode Control ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Low Threshold ◽

Emitting Lasers ◽

Vertical Cavity

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Low-threshold 840-nm laterally oxidized vertical-cavity lasers using AlInGaAs-AlGaAs strained active layers

IEEE Photonics Technology Letters ◽

10.1109/68.593324 ◽

1997 ◽

Vol 9 (7) ◽

pp. 863-865 ◽

Cited By ~ 11

Author(s):

J. Ko ◽

E.R. Hegblom ◽

Y. Akulova ◽

B.J. Thibeault ◽

L.A. Coldren

Keyword(s):

Active Layers ◽

Vertical Cavity Lasers ◽

Low Threshold ◽

Vertical Cavity ◽

Cavity Lasers

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Low-threshold, efficient vertical cavity lasers with tapered apertures

Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243) ◽

10.1109/leos.1998.739519 ◽

2002 ◽

Author(s):

E.R. Hegblom ◽

N.M. Margalit ◽

L.A. Coldren

Keyword(s):

Vertical Cavity Lasers ◽

Low Threshold ◽

Vertical Cavity ◽

Cavity Lasers

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